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AD9671EBZ Datasheet(PDF) 23 Page - Analog Devices

Part # AD9671EBZ
Description  Octal Ultrasound AFE with JESD204B
PDF  61 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

AD9671EBZ Datasheet(HTML) 23 Page - Analog Devices

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AD9675
Data Sheet
Rev. A | Page 22 of 60
On-chip resistor matching results in precise single-ended gains,
which are critical for accurate impedance control. The use of a
fully differential topology and negative feedback minimizes
distortion. Low second-order harmonic distortion is particularly
important in harmonic ultrasound imaging applications.
Active Impedance Matching
The LNA consists of a single-ended voltage gain amplifier with
differential outputs and the negative output externally available
on two output pins (LO-x and LOSW-x) that are controlled via
internal switches. This configuration allows active input
impedance synthesis of 3 different impedance values (and
unterminated value) via connecting up to two external
resistances in parallel and controlling the internal switch states
via SPI. This well known technique is used for interfacing
multiple probe impedances to a single system. For example,
with a fixed gain of 8× (17.9 dB), an active input termination is
synthesized by connecting a feedback resistor between the
negative output pin, LO-x, and the positive input pin, LI-x.
The input resistance calculation is shown in Equation 4.
)
2
1
(
30
)
20
(
||
)
20
(
2
A
R
R
R
FB
FB1
IN
(4)
where:
RFB1 and RFB2 are the external feedback resistors.
20 Ω is the internal switch on resistance.
30 Ω is an internal series resistance common to the two internal
switches.
A/2 is the single-ended gain or the gain from the LI-x inputs to
the LO-x outputs.
RFB can be equal to RFB1, RFB2, or (RFB1 + 20)||(RFB2 + 20)
depending on the connection status of the internal switches.
Because the amplifier has a gain of 8× from its input to its
differential output, it is important to note that the gain, A/2, is
the gain from Pin LI-x to Pin LO-x and that it is 6 dB less than
the gain of the amplifier, or 12.1 dB (4×). The input resistance is
reduced by an internal bias resistor of 6 kΩ in parallel with the
source resistance connected to pin LI-x, with Pin LG-x ac
grounded. Use, the more accurate, Equation 5 to calculate the
required RFB for a desired RIN, even for higher values of RIN.
k
6
||
)
2
/
1
(
30
)
20
(
||
)
20
(
2
A
R
R
R
FB
FB1
IN
(5)
For example, to set RIN to 200 Ω with a single-ended LNA gain of
12.1 dB (4×), the value of RFB1 from Equation 4 must be 950 Ω,
while the switch for RFB2 is open. If the more accurate equation
(Equation 5) is used to calculate RIN, the value is then 194 Ω
instead of 200 Ω, resulting in a gain error of less than 0.27 dB.
Some factors, such as the presence of a dynamic source resistance,
may influence the absolute gain accuracy more significantly. At
higher frequencies, the input capacitance of the LNA must be
considered. The user must determine the level of matching
accuracy and adjust RFB1 and RFB2 accordingly.
RFB is the resulting impedance of the RFB1 and RFB2 combination
(see Figure 33). Use Register 0x02C in the SPI memory to
program the AD9675 for four impedance matching options:
three active terminations and unterminated. Table 8 shows an
example of how to select RFB1 and RFB2 for 66 Ω, 100 Ω, and
200 Ω input impedance for LNA gain = 21.6 dB (12×).
Table 8. Active Termination Example for LNA Gain = 21.6 dB,
RFB1 = 650 Ω, RFB2 = 1350 Ω
Addr 0x02C
Value
RS (Ω)
LO-x
Switch
LOSW-x
Switch
RFB (Ω)
RIN (Ω)
(Eq. 4)
00 (default)
100
On
Off
RFB1
100
01
50
On
On
RFB1||RFB2
69
10
200
Off
On
RFB2
200
11
N/A1
Off
Off
1 N/A means not applicable.
The bandwidth (BW) of the LNA is greater than 80 MHz.
Ultimately, the BW of the LNA limits the accuracy of the
synthesized RIN. For RIN = RS up to about 200 Ω, the best match
is between 100 kHz and 10 MHz, where the lower frequency
limit is determined by the size of the ac coupling capacitors, and
the upper limit is determined by the LNA BW. Furthermore, the
input capacitance and RS limit the BW at higher frequencies.
Figure 34 shows RIN vs. frequency for various values of RFB.
Figure 34. RIN vs. Frequency for Various Values of RFB
(Effects of RSH and CSH Are Also Shown)
However, for larger RIN values, parasitic capacitance starts
rolling off the signal BW before the LNA can produce peaking.
CSH further degrades the match; therefore, do not use CSH for
values of RIN that are greater than 100 Ω. Table 9 lists the
recommended values for RFB and CSH in terms of RIN. CFB is
needed in series with RFB because the dc levels at Pin LO-x and
Pin LI-x are unequal.
10
100
1k
100k
1M
10M
100M
FREQUENCY (Hz)
RS =50Ω,RFB =200Ω,CSH =70pF
RS =100Ω,RFB = 400Ω,CSH =20pF
RS =200Ω,RFB = 800Ω
RS =500Ω,RFB =2kΩ



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