DRV8300: Three-Phase BLDC Gate Driver

1 Features

• Triple Half-Bridge Gate driver

– Drives 3 High-Side and 3 Low-Side N-Channel

MOSFETs (NMOS)

• Integrated Bootstrap Diodes (DRV8300D devices)

• Supports Inverting and Non-Inverting INLx inputs

• Bootstrap gate drive architecture

– 750-mA source current

– 1.5-A Sink current

• Low leakage current on SHx pins (<55 µA)

• Absolute maximum BSTx voltage upto 115-V

• Supports negative Trasients upto -22-V on SHx

pins

• Buit-in cross conduction prevention

• Adjustable Deadtime through DT pin for QFN

package variants

• Fixed Deadtime insertion of 200 nS for TSSOP

package variants

• Supports 3.3-V, and 5-V logic inputs with 20-V Abs

Max

• 4 nS typical propogation delay matching

• Compact QFN and TSSOP packages and

footprints

• Efficient system design with Power Blocks

• Integrated protection features

– BST undervoltage lockout (BSTUV)

– GVDD undervoltage (GVDDUV)

2 Applications

• E-Bikes, E-Scooters, and E-Mobility

• Fans, Pumps, and Servo Drives

• Brushless-DC (BLDC) Motor Modules and PMSM

• Cordless Garden and Power Tools, Lawnmowers

• Cordless Vacuum Cleaners

• Drones, Robotics, and RC Toys

• Industrial and Logistics Robots

3 Description

DRV8300 family of devices provide three half-bridge

gate drivers, each capable of driving high-side and

low-side N-channel power MOSFETs. The DRV8300D

generates the correct gate drive voltages using an

integrated bootstrap diode and external capacitor for

the high-side MOSFETs and GVDD for the low-side

MOSFETs. The DRV8300N generates the correct

gate drive voltages using an external bootstrap diode

and external capacitor for the high-side MOSFETs

and GVDD for the low-side MOSFETs. The Gate

Drive architecture supports peak up to 750-mA source

and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant

negative voltage transients; while high side gate driver

supply BSTx and GHx is able to support to higher

positive voltage transients (115-V) abs max voltage

which improves robustness of the system. Small

propagation delay and delay matching specifications

minimize the dead-time requirement which further

improves

efficiency.

Undervoltage

protection

is

provided for both low and high side through GVDD

and BST undervoltage lockout.

Device Information (1)

PART NUMBER

PACKAGE

BODY SIZE (NOM)

DRV8300DIPW

TSSOP (20)

6.40 mm × 4.40 mm

DRV8300DPW (2)

TSSOP (20)

6.40 mm × 4.40 mm

DRV8300DRGE (2)

VQFN (24)

4.00 mm × 4.00 mm

DRV8300NPW (2)

TSSOP (20)

6.40 mm × 4.40 mm

DRV8300NRGE (2)

VQFN (24)

4.00 mm × 4.00 mm

DRV8300NIPW (2)

TSSOP (20)

6.40 mm × 4.40 mm

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

(2)

Device available for preview only

PVDD

Repeated for 3

phases

MCU

INHA

INHB

INHC

INLA

INLB

INLC

SHA, SHB, SHC

GLA, GLB. GLC

GHA, GHB, GHC

GVDD

GND

DRV8300D

DBx

BSTA, BSTB, BSTC

GVDD

Simplified Schematic for DRV8300D

PVDD

Repeated for 3

phases

MCU

INHA

INHB

INHC

INLA

INLB

INLC

SHA, SHB, SHC

GLA, GLB. GLC

GHA, GHB, GHC

GVDD

GND

DRV8300N

BSTA, BSTB, BSTC

GVDD

Simplified Schematic for DRV8300N

www.ti.com

DRV8300

SLVSFG5 – SEPTEMBER 2020

Copyright © 2020 Texas Instruments Incorporated

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DRV8300

SLVSFG5 – SEPTEMBER 2020

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. ADVANCE INFORMATION for preproduction products; subject to change

without notice.