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DP8428 Datasheet(PDF) 23 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # DP8428
Description  1 Megabit High Speed Dynamic RAM Controller/Drivers
PDF  26 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

DP8428 Datasheet(HTML) 23 Page - National Semiconductor (TI)

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Switching Characteristics DP8428 and DP8429 (Continued)
VCC e 50V g 10% 0 C s TA s 70 C unless otherwise noted (Notes 2 4 5) The output load capacitance is typical for 4
banks of 22 DRAMs each or 88 DRAMs including trace capacitance
These values are Q0-Q9 CL e 500 pF RAS0–RAS3 CL e 150 pF WE CL e 500 pF CAS CL e 600 pF RL e 500X
unless otherwise noted See
Figure 11 for test load Maximum propagation delays are specified with all outputs
switching
Preliminary
Symbol
Refresh Parameter
Condition
CL
All CL e 50 pF
Units
Min
Max
Min
Max
tRGRL
RGCK Low to RAS Low
Figure 3
20
41
ns
tRGRH
RGCK Low to RAS High
Figure 3
20
48
ns
tRQHRF
RFSH Hold Time from RGCK
Figure 3
2T
ns
tRFRH
RFSH High to RAS High
(See Mode 1
42
ns
(Ending Forced Refresh
Description)
early)
tRFSRG
RFSH Low Set-up to
(See Mode 1
12
ns
RGCK Low (Mode 1)
Description)
Figure 3
tCSHR
CS High to RASIN Low for
Figure 7
10
ns
Hidden Refresh
tCSRL1
CS Low to Access RASIN
Figure 3
34
ns
for DP8429
Low (Using Mode 5 with
Auto Refresh Mode)
tCSRL1
CS Low to Access RASIN
Figure 3
5ns
for DP8428
Low (Using Mode 5 with
Auto Refresh Mode)
tCSRL0
CS Low to Access RASIN
(See Mode 5
5
ns
Low (Using Modes 4 or 5
Description)
with externally controlled
Refresh)
tRKRL
RFCK High to RASIN
50
ns
low for hidden Refresh
Input Capacitance TA e 25 C (Note 2)
Symbol
Parameter
Condition
Min
Typ
Max
Units
CIN
Input Capacitance ADS RC CS M2 RASIN
8pF
CIN
Input Capacitance All Other Inputs
5
pF
Note 1
‘‘Absolute Maximum Ratings’’ are the values beyond which the safety of the device cannot be guaranteed They are not meant to imply that the device
should be operated at these limits The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation
Note 2
All typical values are for TAe25 C and VCCe50V
Note 3
This test is provided as a monitor of Driver output source and sink current capability Caution should be exercised in testing this parameter In testing these
parameters a 15X resistor should be placed in series with each output under test One output should be tested at a time and test time should not exceed 1 second
Note 4
Input pulse 0V to 30V tRetFe25 ns fe25 MHz tPWe200 ns Input reference point on AC measurements is 15V Output reference points are 24V for
High and 08V for Low
Note 5
The load capacitance on RF IO should not exceed 50 pF
23



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