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DP8428 Datasheet(PDF) 14 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # DP8428
Description  1 Megabit High Speed Dynamic RAM Controller/Drivers
PDF  26 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

DP8428 Datasheet(HTML) 14 Page - National Semiconductor (TI)

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DP8428DP8429 Mode Descriptions (Continued)
Once it is started a hidden refresh will continue even if
RFCK goes low However CS must be high throughout the
refresh (until RASIN goes high)
These hidden refreshes are valuable in that they do not
delay accesses When determining the duty cycle of RFCK
the high time should be maximized in order to maximize the
probability of hidden refreshes If a hidden refresh doesn’t
happen then a refresh request will occur on RFIO when
RFCK goes low After receiving the request the system
must perform a refresh while RFCK is low This may be
done by going to mode 1 and allowing an automatic refresh
(see mode 1 description) This refresh must be completed
while RFCK is low thus the RFCK low time is determined by
the worst-case time required by the system to respond to a
refresh request
(c) Mode 5 Refresh (Hidden Refresh) with mode 0 Refresh
(External Refresh)
This refresh scheme is identical to that in (b) except that
after receiving a refresh request mode 0 is entered to do
the refresh (see mode 0 description) The refresh request is
terminated (RFIO goes high) as soon as mode 0 is en-
tered This method requires more control than using mode 1
(auto-refresh) however it may be desirable if the mode 1
refresh time is considered to be excessive
Example
Figure 7b demonstrates how a system designer would use
the DP8429 in mode 5 based on certain characteristics of
his system
System Characteristics
1) DRAM used has min tRAH requirement of 15 ns and
min tASR of0ns
2) DRAM address is valid from time TV to the end of the
memory cycle
3) four banks of twenty-two 256k memory chips each are
being driven
Using the DP8429 (see
Figure 7b )
1) Tie pin 4 (RAHS) high to guarantee a 15 ns minimum
tRAH which is sufficient for the DRAMs being used
2) Generate RASIN no earlier than time TV a tASRL (see
switching characteristics) so that the row address is
valid on the DRAM address inputs before RAS occurs
3) Tie ADS high since latching the DRAM address on the
DP8429 is not necessary
4) Connect the first 20 system address bits to R0-R9 and
C0-C9 and bits 21 and 22 to B0 and B1
5) Connect each RAS output of the DP8429 to the RAS
inputs of the DRAMs of one bank of the memory array
connect Q0-Q9 of the DP8429 to A0-A9 of all DRAMs
connect CAS of the DP8429 to CAS of all the DRAMs
Figure 7c illustrates a similar example using the DP8428 to
drive two 32-bit banks
TLF8649 – 22
FIGURE 7a Hidden Refreshing (Mode 5) and Forced Refreshing (Mode 1) Timing
14



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