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DP8428 Datasheet(PDF) 14 Page - National Semiconductor (TI) |
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DP8428 Datasheet(HTML) 14 Page - National Semiconductor (TI) |
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14 / 26 page ![]() DP8428DP8429 Mode Descriptions (Continued) Once it is started a hidden refresh will continue even if RFCK goes low However CS must be high throughout the refresh (until RASIN goes high) These hidden refreshes are valuable in that they do not delay accesses When determining the duty cycle of RFCK the high time should be maximized in order to maximize the probability of hidden refreshes If a hidden refresh doesn’t happen then a refresh request will occur on RFIO when RFCK goes low After receiving the request the system must perform a refresh while RFCK is low This may be done by going to mode 1 and allowing an automatic refresh (see mode 1 description) This refresh must be completed while RFCK is low thus the RFCK low time is determined by the worst-case time required by the system to respond to a refresh request (c) Mode 5 Refresh (Hidden Refresh) with mode 0 Refresh (External Refresh) This refresh scheme is identical to that in (b) except that after receiving a refresh request mode 0 is entered to do the refresh (see mode 0 description) The refresh request is terminated (RFIO goes high) as soon as mode 0 is en- tered This method requires more control than using mode 1 (auto-refresh) however it may be desirable if the mode 1 refresh time is considered to be excessive Example Figure 7b demonstrates how a system designer would use the DP8429 in mode 5 based on certain characteristics of his system System Characteristics 1) DRAM used has min tRAH requirement of 15 ns and min tASR of0ns 2) DRAM address is valid from time TV to the end of the memory cycle 3) four banks of twenty-two 256k memory chips each are being driven Using the DP8429 (see Figure 7b ) 1) Tie pin 4 (RAHS) high to guarantee a 15 ns minimum tRAH which is sufficient for the DRAMs being used 2) Generate RASIN no earlier than time TV a tASRL (see switching characteristics) so that the row address is valid on the DRAM address inputs before RAS occurs 3) Tie ADS high since latching the DRAM address on the DP8429 is not necessary 4) Connect the first 20 system address bits to R0-R9 and C0-C9 and bits 21 and 22 to B0 and B1 5) Connect each RAS output of the DP8429 to the RAS inputs of the DRAMs of one bank of the memory array connect Q0-Q9 of the DP8429 to A0-A9 of all DRAMs connect CAS of the DP8429 to CAS of all the DRAMs Figure 7c illustrates a similar example using the DP8428 to drive two 32-bit banks TLF8649 – 22 FIGURE 7a Hidden Refreshing (Mode 5) and Forced Refreshing (Mode 1) Timing 14 |
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