AT45DB161E datasheet(19/80 Pages) DIALOG

19 / 80 page

AT45DB161E

DS-AT45DB161E–8782N–03-2021

The device also incorporates an intelligent erase and programming algorithm that can detect when a byte location

fails to erase or program properly. If an erase or program error arises, it is indicated by the EPE bit in the Status

The Read-Modify-Write command uses the same opcodes as the Auto Page Rewrite command. If no data bytes

are clocked into the device, then the device performs an Auto Page Rewrite operation. See the Auto Page Rewrite

command description on page 26 for more details.

7.7

Page Erase

The Page Erase command can be used to individually erase any page in the main memory array allowing the

Buffer to Main Memory Page Program without Built-In Erase command or the Main Memory Byte/Page Program

through Buffer 1 command to be used at a later time.

To perform a Page Erase with the standard DataFlash page size (528 bytes), an opcode of 81h must be clocked

into the device followed by three address bytes comprised of two dummy bits, 12 page address bits (PA11 - PA0)

that specify the page in the main memory to be erased, and 10 dummy bits.

To perform a Page Erase with the binary page size (512 bytes), an opcode of 81h must be clocked into the device

followed by three address bytes comprised of three dummy bits, 12 page address bits (A20 - A9) that specify the

page in the main memory to be erased, and nine dummy bits.

When a low-to-high transition occurs on the CS pin, the device erases the selected page (the erased state is a

logic 1). The erase operation is internally self-timed and takes a maximum time of tPE. During this time, the

RDY/BUSY bit in the Status Register indicates that the device is busy.

The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase

properly. If an erase error arises, it is indicated by the EPE bit in the Status Register.

7.8

Block Erase

The Block Erase command can be used to erase a block of eight pages at one time. This command is useful when

needing to pre-erase larger amounts of memory and is more efficient than issuing eight separate Page Erase

commands.

To perform a Block Erase with the standard DataFlash page size (528 bytes), an opcode of 50h must be clocked

into the device followed by three address bytes comprised of two dummy bits, nine page address bits (PA11 -

PA3), and 13 dummy bits. The nine page address bits are used to specify which block of eight pages is to be

erased.

To perform a Block Erase with the binary page size (512 bytes), an opcode of 50h must be clocked into the device

followed by three address bytes comprised of three dummy bits, nine page address bits (A20 - A12), and 12

dummy bits. The nine page address bits are used to specify which block of eight pages is to be erased.

When a low-to-high transition occurs on the CS pin, the device erases the selected block of eight pages. The erase

operation is internally self-timed and takes a maximum time of tBE. During this time, the RDY/BUSY bit in the Status

The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase

properly. If an erase error arises, it is indicated by the EPE bit in the Status Register.

AT45DB161E Datasheet(PDF) 19 Page - Dialog Semiconductor