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LT3757 Datasheet(PDF) 19 Page - Analog Devices |
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LT3757 Datasheet(HTML) 19 Page - Analog Devices |
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19 / 48 page ![]() LTC7841 19 Rev. 0 For more information www.analog.com OPERATION In pulse-skipping mode, if VIN is between 100% and 110% of the regulated VOUT voltage, TG turns on if the inductor current rises above a certain threshold and turns off if the inductor current falls below this threshold. This thresh- old current is set to approximately 6%, 4% or 3% of the maximum ILIM current when the ILIM pin is grounded, floating or tied to INTVCC, respectively. If the controller is programmed to Burst Mode operation under this same VIN window, then TG remains off regardless of the induc- tor current. If VIN rises above 110% of the regulated VOUT voltage in any mode, the controller turns on TG regardless of the inductor current. In Burst Mode operation, however, the internal charge pump turns off if the chip is asleep. With the charge pump off, there would be nothing to prevent the boost capacitor from discharging, resulting in an insufficient TG voltage needed to keep the top MOSFET completely on. To prevent excessive power dissipation across the body diode of the top MOSFET in this situation, the chip can be switched over to forced continuous mode to enable the charge pump; a Schottky diode can also be placed in parallel with the top MOSFET. Power Good The PGOOD pin is connected to an open drain of an internal N-channel MOSFET. The MOSFET turns on and pulls the PGOOD pin low when the VFB pin voltage is not within ±10% of the reference voltage. The PGOOD pin is also pulled low when the corresponding RUN pin is low (shut down). When the VFB pin voltage is within the ±10% requirement, the MOSFET is turned off and the pin is allowed to be pulled up by an external resistor to a source of up to 6V (abs max). Overvoltage Protection An overvoltage event is defined as when the output feed- back voltage (VFB) is greater than 110% of its normal regulated point set by the DAC. During an overvoltage event, TG1/TG2 are turned on continuously until the over- voltage condition is cleared, regardless of whether Burst Mode operation, pulse-skipping mode, or forced continu- ous mode is selected by the PLLIN/MODE pin. This can cause large negative inductor currents to flow from the output to the input if the output voltage is higher than the input voltage. Note however that in Burst Mode operation, the LTC7841 is in sleep during an overvoltage condition, which dis- ables the internal oscillator and BOOST-SW charge pump. So the BOOST-SW voltage may discharge (due to leak- age) if the overvoltage conditions persists indefinitely. If BOOST-SW discharges, then by definition TG would turn off. BOOST Supply Refresh and Internal Charge Pump Each top MOSFET driver is biased from the floating boot- strap capacitor, CB, which normally recharges during each cycle through an external diode when the bottom MOSFET turns on. There are two considerations for keep- ing the BOOST supply at the required bias level. During start-up, if the bottom MOSFET is not turned on within 200μs after UVLO goes low, the bottom MOSFET will be forced to turn on for ~400ns. This forced refresh gener- ates enough BOOST-SW voltage to allow the top MOSFET ready to be fully enhanced instead of waiting for the initial few cycles to charge up. There is also an internal charge pump that keeps the required bias on BOOST. The charge pump always operates in both forced continuous mode and pulse-skipping mode. In Burst Mode operation, the charge pump is turned off during sleep and enabled when the chip wakes up. The internal charge pump can normally supply a charging current of 55μA. |
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