Electronic Components Datasheet Search
  English  ▼

X  

LT3757 Datasheet(PDF) 19 Page - Analog Devices

Part # LT3757
Description  PolyPhase Synchronous Boost Controller with PMBus Interface
PDF  48 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LT3757 Datasheet(HTML) 19 Page - Analog Devices

Back Button LT3757 Datasheet HTML 15Page - Analog Devices LT3757 Datasheet HTML 16Page - Analog Devices LT3757 Datasheet HTML 17Page - Analog Devices LT3757 Datasheet HTML 18Page - Analog Devices LT3757 Datasheet HTML 19Page - Analog Devices LT3757 Datasheet HTML 20Page - Analog Devices LT3757 Datasheet HTML 21Page - Analog Devices LT3757 Datasheet HTML 22Page - Analog Devices LT3757 Datasheet HTML 23Page - Analog Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 19 / 48 page
background image
LTC7841
19
Rev. 0
For more information www.analog.com
OPERATION
In pulse-skipping mode, if VIN is between 100% and 110%
of the regulated VOUT voltage, TG turns on if the inductor
current rises above a certain threshold and turns off if the
inductor current falls below this threshold. This thresh-
old current is set to approximately 6%, 4% or 3% of the
maximum ILIM current when the ILIM pin is grounded,
floating or tied to INTVCC, respectively. If the controller is
programmed to Burst Mode operation under this same
VIN window, then TG remains off regardless of the induc-
tor current.
If VIN rises above 110% of the regulated VOUT voltage in
any mode, the controller turns on TG regardless of the
inductor current. In Burst Mode operation, however, the
internal charge pump turns off if the chip is asleep. With
the charge pump off, there would be nothing to prevent
the boost capacitor from discharging, resulting in an
insufficient TG voltage needed to keep the top MOSFET
completely on. To prevent excessive power dissipation
across the body diode of the top MOSFET in this situation,
the chip can be switched over to forced continuous mode
to enable the charge pump; a Schottky diode can also be
placed in parallel with the top MOSFET.
Power Good
The PGOOD pin is connected to an open drain of an
internal N-channel MOSFET. The MOSFET turns on and
pulls the PGOOD pin low when the VFB pin voltage is
not within ±10% of the reference voltage. The PGOOD
pin is also pulled low when the corresponding RUN pin
is low (shut down). When the VFB pin voltage is within
the ±10% requirement, the MOSFET is turned off and the
pin is allowed to be pulled up by an external resistor to a
source of up to 6V (abs max).
Overvoltage Protection
An overvoltage event is defined as when the output feed-
back voltage (VFB) is greater than 110% of its normal
regulated point set by the DAC. During an overvoltage
event, TG1/TG2 are turned on continuously until the over-
voltage condition is cleared, regardless of whether Burst
Mode operation, pulse-skipping mode, or forced continu-
ous mode is selected by the PLLIN/MODE pin. This can
cause large negative inductor currents to flow from the
output to the input if the output voltage is higher than the
input voltage.
Note however that in Burst Mode operation, the LTC7841
is in sleep during an overvoltage condition, which dis-
ables the internal oscillator and BOOST-SW charge pump.
So the BOOST-SW voltage may discharge (due to leak-
age) if the overvoltage conditions persists indefinitely.
If BOOST-SW discharges, then by definition TG would
turn off.
BOOST Supply Refresh and Internal Charge Pump
Each top MOSFET driver is biased from the floating boot-
strap capacitor, CB, which normally recharges during
each cycle through an external diode when the bottom
MOSFET turns on. There are two considerations for keep-
ing the BOOST supply at the required bias level. During
start-up, if the bottom MOSFET is not turned on within
200μs after UVLO goes low, the bottom MOSFET will be
forced to turn on for ~400ns. This forced refresh gener-
ates enough BOOST-SW voltage to allow the top MOSFET
ready to be fully enhanced instead of waiting for the initial
few cycles to charge up. There is also an internal charge
pump that keeps the required bias on BOOST. The charge
pump always operates in both forced continuous mode
and pulse-skipping mode. In Burst Mode operation, the
charge pump is turned off during sleep and enabled when
the chip wakes up. The internal charge pump can normally
supply a charging current of 55μA.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com