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RT600 Datasheet(PDF) 102 Page - NXP Semiconductors

Part # RT600
Description  Dual-core microcontroller with 32-bit Cortex짰-M33 and Xtensa HiFi4 Audio DSP CPUs; Up to 4.5 MB SRAM; FlexSPI with cache and dynamic decryption; High-speed USB device/host Phy; 12-bit 1 Msamples/s ADC; Analog Comparator; Audio
PDF  167 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

RT600 Datasheet(HTML) 102 Page - NXP Semiconductors

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RT600
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© NXP Semiconductors B.V. 2022. All rights reserved.
Product data sheet
Rev. 2.0 — 1 April 2022
102 of 165
NXP Semiconductors
RT600
Dual-core microcontroller with 32-bit Cortex-M33 and Xtensa HiFi4
Audio DSP CPUs
[1]
Based on the power API library from the SDK software package available on nxp.com.
[2]
Typical ratings are not guaranteed. Typical values listed are at room temperature (25
C). VDD_AO1V8 = VDD1V8 = VDDIO_0/1/2 =
VDDA_ADC1V8 = 1.8 V. VDDA_ADC3V3 = VREFP = USB1_VDD3V3 = 3.3 V
[3]
Clock source IRC. PLL disabled.
[4]
Characterized through bench measurements using typical samples.
[5]
Compiler settings: IAR C/C++ Compiler for Arm ver 8.32.3, optimization level 0, optimized for time off.
[6]
All peripheral clocks disabled.
[7]
Clock source IRC. PLL enabled.
[1]
Typical ratings are not guaranteed. Typical values listed are at room temperature (25
C), All power supplies to = 1.8 V except
USB1_VDD3V3 = 3.3 v
[2]
Characterized through bench measurements using typical samples.
[3]
Guaranteed by characterization, not tested in production.
[4]
In deep-sleep mode, the VDDCORE voltage is set to 0.7V.
Table 28.
Static characteristics: Power consumption in deep-sleep mode[4]
Tamb =-20 °C to +85°C, unless otherwise specified,
Symbol
Parameter
Conditions
Min Typ[1][2]
Max[3]
Unit
IVDD1V8
supply current
Deep-sleep mode; SRAM (128 KB) powered,
Internal LDO enabled. Array On, Periphery Off
-109
-
A
IVDD1V8_1
supply current
Deep-sleep mode; SRAM (128 KB) powered,
Internal LDO enabled. Array On, Periphery Off
-65
-
A
IVDDCORE
supply current
Deep-sleep mode; SRAM (32 KB) powered,
Internal LDO disabled. Array On, Periphery Off
Tamb =25 C
-75
-
A
IVDDCORE
supply current
Deep-sleep mode; SRAM (128 KB) powered,
Internal LDO disabled. Array On, Periphery Off
Tamb =25 C
-77
-
A
IVDDCORE
supply current
Deep-sleep mode; SRAM (4.5 MB) powered,
Internal LDO disabled. Array On, Periphery Off
Tamb =25 C
-190
-
A
IVDD_AO1V8
supply current
Deep-sleep mode; SRAM (128 KB) powered,
Internal LDO enabled. Array On, Periphery Off
-0.6
-
A
IVDDIO_0
supply current
Deep-sleep mode; SRAM (128 KB) powered,
Internal LDO enabled. Array On, Periphery Off
-7.0
-
A
IVDDIO_1
supply current
Deep-sleep mode; SRAM (128 KB) powered,
Internal LDO enabled. Array On, Periphery Off
-0.9
-
A
IVDDIO_2
supply current
Deep-sleep mode; SRAM (128 KB) powered,
Internal LDO enabled. Array On, Periphery Off
-6.4
-
A
IVDDA_ADC1V8 supply current
Deep-sleep mode; SRAM (128 KB) powered,
Internal LDO enabled. Array On, Periphery Off
-0.1
-
A
IVDDA_BIAS
supply current
Deep-sleep mode; SRAM (128 KB) powered,
Internal LDO enabled. Array On, Periphery Off
-0.1
-
A
IVREFP
supply current
Deep-sleep mode; SRAM (128 KB) powered,
Internal LDO enabled. Array On, Periphery Off
-0.1
-
A
IUSB1_VDD3V3 supply current
Deep-sleep mode; SRAM (128 KB) powered,
Internal LDO enabled. Array On, Periphery Off
-0.1
-
A



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