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LM7481 Datasheet(PDF) 3 Page - Texas Instruments

Part # LM7481
Description  LM7481 3-V to 65-V Ideal Diode Controller Driving Back to Back NFETs
PDF  35 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LM7481 Datasheet(HTML) 3 Page - Texas Instruments

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5 Pin Configuration and Functions
11
10
9
8
7
2
3
4
5
6
C
DGATE
A
OV
VSNS
SW
GND
OUT
CAP
RTN
1
12
HGATE
EN/UVLO
VS
Exposed
Thermal
Pad
Figure 5-1. DRR Package, 12-Pin WSON (Top View)
Table 5-1. Pin Functions
PIN
TYPE(1)
DESCRIPTION
NAME
LM74810
WSON
DGATE
1
O
Diode Controller Gate Drive Output. Connect to the GATE of the external
MOSFET. Anode of the ideal diode.
A
2
I
Anode of the ideal diode. Connect to the source of the external MOSFET.
VSNS
3
I
Voltage sensing input.
SW
4
I
Voltage sensing disconnect switch terminal. VSNS and SW are internally
connected through a switch. Use SW as the top connection of the battery
sensing or OV resistor ladder network. When EN/UVLO is pulled low, the switch
is OFF disconnecting the resistor ladder from the battery line thereby cutting off
the leakage current. If the internal disconnect switch between VSNS and SW is
not used then short them together and connect to VS pin.
OV
5
I
Adjustable overvoltage threshold input. Connect a resistor ladder across SW to
OV terminal. When the voltage at OVP exceeds the overvoltage cut-off threshold
then the HGATE is pulled low turning OFF the HSFET. HGATE turns ON when
the sense voltage goes below the OVP falling threshold.
EN/UVLO
6
I
EN/UVLO Input. Connect to VS pin for always ON operation. Can be driven
externally from a mirco controller I/O. Pulling it low below V(ENF) makes the
device enter into low Iq shutdown mode. For UVLO, connect an external resistor
ladder to EN/UVLO to GND.
GND
7
G
Connect to the system ground plane.
HGATE
8
O
GATE driver output for the HSFET. Connect to the GATE of the external FET.
OUT
9
I
Connect to the output rail (external MOSFET source).
VS
10
I
Input power supply to the IC. Connect VS to middle point of the common drain
back to back MOSFET configuration. Connect a 100nF capacitor across VS and
GND pins.
CAP
11
O
Charge pump output. Connect a 100-nF capacitor across CAP and VS pins.
C
12
I
Cathode of the ideal diode. Connect to the drain of the external MOSFET.
RTN
Thermal Pad
—
Leave exposed pad floating. Do not connect to GND plane.
(1)
I = input, O = output, I/O = input and output, P = power, G = Ground
www.ti.com
LM7481
SNOSDD9 – DECEMBER 2022
Copyright © 2022 Texas Instruments Incorporated
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Product Folder Links: LM7481



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