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L99DZ100GP Datasheet(PDF) 51 Page - STMicroelectronics |
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L99DZ100GP Datasheet(HTML) 51 Page - STMicroelectronics |
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51 / 197 page ![]() DS11546 Rev 5 51/197 L99DZ100G, L99DZ100GP Electrical specifications 196 3.4.21 Fail safe low-side switch The voltages are referred to power ground and currents are assumed positive, when the current flows into the pin. 6 V ≤ VS ≤ 18 V; Tj = 40 °C to 150 °C, unless otherwise specified. IECDR Current into ECDR Vtarget(3) > VECV + 500 mV; VECDR = 3.5 V -100 -10 µA Vtarget(3) < VECV - 500 mV; VECDR = 1.0 V; Vtarget = 0 V; VECV = 0.5 V 10 100 µA Recdrdis Pull-down resistance at ECDR in fast discharge mode and while EC-mode is off VECDR = 0.7 V; ECON = ‘1’, EC<5:0> = 0 or ECON = ‘0’ 10 kΩ 1. Bit ECV_HV (Config Reg) ='1' or ‘0’: ECV voltage, where IIECDR can change sign. 2. 1 LSB (Least Significant Bit) = 23.8 mV typ 3. Vtarget is set by bits EC<5:0> (CR 11) and bit ECV_HV (Config Reg); tested for each individual bit. Table 26. Electro-chrome mirror driver (continued) Symbol Parameter Test condition Min. Typ. Max. Unit Table 27. Fail safe low-side switch Symbol Parameter Test condition Min. Typ. Max. Unit VOUT_max Max output voltage in case of missing supply IOUT = 1 mA; VS = VSREG = 0 V 2 2.5 V RDSON DC output resistance ILOAD = 250 mA; Tj = 25 °C 1.4 Ω ILOAD = 250 mA; Tj = 130 °C 2.2 Ω IOLimit Overcurrent limitation 8 V < VS < 16 V 500 1500 mA tONHL Turn on delay time to 10% VOUT 100 µs tOFFLH Turn off delay time to 90% VOUT 100 µs tSCF Short circuit filter time 64 µs dVmax/dt Maximum external applied slew rate on LS1_FSO and LS2_FSO without switching on LS Guaranteed by design 60 V/µs |
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