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L99DZ100GP Datasheet(PDF) 65 Page - STMicroelectronics |
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L99DZ100GP Datasheet(HTML) 65 Page - STMicroelectronics |
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65 / 197 page ![]() DS11546 Rev 5 65/197 L99DZ100G, L99DZ100GP Electrical specifications 196 3.4.30 Temperature diode characteristics The voltages are referred to ground and currents are assumed positive, when the current flows into the pin. 6 V ≤ VSREG ≤ 18 V, Tj = -40 °C to 150 °C 3.4.31 Interrupt outputs The voltages are referred to ground and currents are assumed positive, when the current flows into the pin. 6 V ≤ VSREG ≤ 18 V, Tj = -40 °C to 150°C IEII Integral linearity error 4 LSB IEDI Differential linearity error 2LSB VAINVS Conversion voltage range (VS, VSREG & WU) 122 V VAINTemp Conversion voltage range (TCL1 …TCL6) 02 V 1. Guaranteed by design. Table 56. ADC characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit Table 57. Temperature diode characteristics Symbol Parameter Test condition Min. Typ. Max. Unit VTROOM 1-6 TSENSE output voltage at 25 °C VS = 12 V; T = 25 °C — 1.4 V VTSENSE1-6 TSENSE output voltage 1 - 8 T = 25 °C; T = 130 °C; T = -40 °C —-4 mV/K Table 58. Interrupt outputs Symbol Parameter Test condition Min. Typ. Max. Unit VINTL Output low level IINT = -4 mA 0.5 V VINTH Output high level IINT = 4 mA V1 - 0.5 V IINTLK 3-state leakage current 0 V < VINT < V1 -10 10 μA tInterrupt Interrupt pulse duration (NINT, RxD_L/NINT, RxD_C/NINT 56 s tInt_react Interrupt reaction time Tested by scan chain 6 40 µs |
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