L99DZ100GP datasheet(23/197 Pages) STMICROELECTRONICS

23 / 197 page

DS11546 Rev 5

23/197

L99DZ100G, L99DZ100GP

Electrical specifications

196

3.3

Thermal data

All parameters are guaranteed in the junction temperature range -40 to 150°C (unless

otherwise specified); the device is still operative and functional at higher temperatures (up to

175°C).

Note:

Parameters limits at higher junction temperatures than 150°C may change respect to what

is specified as per the standard temperature range.

Note:

Device functionality at high junction temperature is guaranteed by characterization.

3.3.1

LQFP64 thermal data

Devices belonging to L99DZxxx family embed a multitude of junctions (i.e. Outputs based

on a PowerMOSFET stage) housed in a relatively small piece of silicon. The devices

contain, among all the described features, 6 Half-bridges (12 N-Channel PowerMOS), 10

high-sides and two voltage regulators; all the other derivatives, even if smaller than the

family super set device, still contain a significant number of junctions.

For this reason, using the Thermal Impedance of a single junction (i.e. voltage regulator or

major power dissipation contributor) does not allow to predict thermal behavior of the whole

device and therefore it is not possible to assess if a device is thermally suitable for a given

activation profile and loads characteristics.

Thermal information is provided as temperature reading by different clusters placed close to

the most dissipative junctions.

Some representative and realistic worst-case thermal profiles are described in the below

paragraph.

Following measurement methods can be easily implemented, by final user, for a specific

activation profile.

Table 5. Operating junction temperature

Symbol

Parameter

Value

Unit

Operating junction temperature

-40 to 175

°C

Table 6. Temperature warning and thermal shutdown

Symbol

Parameter

Min. Typ.

Max.

Unit

Thermal overtemperature warning threshold

Tj(1)

1. Non-overlapping.

140

150

160

°C

TSD1

Thermal shutdown junction temperature 1

Tj(1)

Cluster 1-4

Cluster 5-6

165

175

185

190

°C

TSD2

Thermal shutdown junction temperature 2

Tj(1)

175

185

195

°C

TSD12hys

Hysteresis

°C

Tjtft

Thermal warning / shutdown filter time

µs

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