EM783 datasheet(39/58 Pages) NXP

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EM783

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Product data sheet

Rev. 2 — 17 January 2014

39 of 58

NXP Semiconductors

EM783

Energy metering IC; 32 kB flash, 8 kB SRAM, 4 kB EEPROM

10.5 Internal oscillators

[1]

Parameters are valid over operating temperature range unless otherwise specified.

[2]

Typical ratings are not guaranteed. The values listed are at room temperature (25

C), nominal supply

voltages.

[1]

Typical ratings are not guaranteed. The values listed are at room temperature (25

C), nominal supply

voltages.

Fig 16. External clock timing (with an amplitude of at least Vi(RMS) = 200 mV)

tCHCL

tCLCX

tCHCX

Tcy(clk)

tCLCH

002aaa907

Table 13.

Dynamic characteristic: IRC

Tamb = 40 C to +85 C; 2.7 V  VDD(3V3)  3.6 V.[1]

Symbol

Parameter

Conditions

Min

Typ[2]

Max

Unit

fosc(RC)

internal RC oscillator frequency -

11.88

12.12

MHz

Conditions: Frequency values are typical values. 12 MHz

 1 % accuracy is guaranteed for

2.7 V

 V

DD(3V3)  3.6 V and Tamb = 40 C to +85 C. Variations between parts may cause the

IRC to fall outside the 12 MHz

 1 % accuracy specification for voltages below 2.7 V.

Fig 17. Internal IRC frequency vs. temperature

Table 14.

Dynamic characteristics: WDOsc and LFOsc

Symbol Parameter

Conditions

Min

Typ[1]

Max

Unit

fosc(int)

internal oscillator

frequency

DIVSEL = 0x1F, FREQSEL = 0x1

in the WDTOSCCTRL register;

[2][3] -9.4

kHz

DIVSEL = 0x00, FREQSEL = 0xF

in the WDTOSCCTRL register

[2][3] -

2300

kHz

aaa-009888

11.95

12.05

12.15

(MHz)

11.85

temperature (°C)

-40

-15

VDD = 3.6 V

3.3 V

3.0 V

2.7 V

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