EM783-SC datasheet(36/58 Pages) NXP

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EM783

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Product data sheet

Rev. 2 — 17 January 2014

36 of 58

NXP Semiconductors

EM783

Energy metering IC; 32 kB flash, 8 kB SRAM, 4 kB EEPROM

[1]

Values are derived from simulation.

Table 9.

Power supply ramp characteristics

Tamb = –40C to 85C. [1]

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Cold power-up (see regions A to C in Figure 15)

twait

wait time

Region A: power-down

supply voltage = GND

[1]

rise time

Region B: ramp up

GND

 supply voltage  V

s

twait

wait time

Region C: powered-up

supply voltage = VDD

150

s

Shallow power droop cycle (see regions D to G in Figure 15); BOD enabled

fall time

Region D: ramp down

VDD  supply voltage > Vth(fast_ramp)

s

twait

wait time

Region E: power-down

Vth(fast_ramp)  supply voltage <

Vth(UVLO)

s

rise time

Region F: ramp up

Vth(fast_ramp)  supply voltage < VDD

s

twait

wait time

Region G: powered-up

supply voltage = VDD

s

Deep power droop cycle (see regions H to J in Figure 15)

twait

wait time

Region H: power-down

GND < supply voltage < Vth(fast_ramp)

s

rise time

Region I: ramp up

GND

 supply voltage < V

s

twait

wait time

Region J: powered-up

supply voltage = VDD

150

s

Voltage thresholds

Vth(droop)

droop

threshold

voltage

900

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