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S71GS256 Datasheet(PDF) 186 Page - SPANSION

Part # S71GS256
Description  128N based MCPs
PDF  195 Pages
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S71GS256 Datasheet(HTML) 186 Page - SPANSION

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186
CellularRAM-2A
cellRAM_02_A0 December 15, 2004
Advan ce
In form ati o n
Notes:
1. High-Z to Low-Z timings are tested with the circuit shown in Figure 71 on page 184. The Low-Z timings measure a
100mV transition away from the High-Z (VCCQ/2) level toward either VOH or VOL.
2. Low-Z to High-Z timings are tested with the circuit shown in Figure 71 on page 184. The High-Z timings measure
a 100mV transition from either VOH or VOL toward VCCQ/2.
Table 76. WRITE Cycle Timing Requirements
Parameter
Symbol
Min
Max
Units
Notes
Address Setup Time
tAS
0ns
Address Valid to End of Write
tAW
70
ns
Byte Select to End of Write
tBW
70
ns
CE# HIGH Time During Write
tCEH
5ns
Maximum CE# Pulse Width
tCEM
10
µs
Chip Enable to End of Write
tCW
70
ns
Data Hold from Write Time
tDH
0ns
Data WRITE Setup Time
tDW
23
ns
Chip Enable to Low-Z Output
tLZ
10
ns
1
End WRITE to Low-Z Output
tOW
5ns
Write Cycle Time
tWC
70
ns
Write to High-Z Output
tWHZ
08
ns
2
Write Pulse Width
tWP
46
Write Recovery Time
tWR
0ns
Table 77. Load Configuration Register Timing Requirements
Parameter
Symbol
Min
Max
Units
Notes
Address Setup Time
tAS
0ns
Address Valid to End of Write
tAW
70
ns
Chip Deselect to ZZ# LOW
tCDZZ
5ns
Chip Enable to End of Write
tCW
70
ns
Write Cycle Time
tWC
70
ns
Write Pulse Width
tWP
40
ns
Write Recovery Time
tWR
0ns
ZZ# LOW to WE# LOW
tZZWE
10
ns
Table 78. Deep Power Down Timing Requirements
Parameter
Symbol
Min
Max
Units
Notes
Chip Deselect to ZZ# LOW
tCDZZ
5ns
Deep Power-Down Recovery
tR
150
µs
Minimum ZZ# Pulse Width
tZZMIN
10
µs



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