BLW85 datasheet(8/15 Pages) PHILIPS

8 / 15 page

March 1993

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW85

Fig.9

Typical values; f = 175 MHz;

 VCE = 12,5 V; - - - VCE = 13,5 V.

handbook, halfpage

010

100

MGP617

(W)

PS (W)

Th = 25 °C

Th = 70 °C

Fig.10 Typical values; f = 175 MHz ;Th =25 °C;

 VCE = 12,5 V; - - - VCE = 13,5 V.

handbook, halfpage

(dB)

100

(%)

MGP618

PL (W)

Fig.11 R.F. SOAR; (short-time operation during

mismatch); f = 175 MHz; Th = 70 °C;

Rth mb-h = 0,3 K/W ;

VCEnom = 12,5 V or 13,5 V; PS =PSnom at

VCEnom and VSWR =1 measured in the

circuit of Fig.7.

handbook, halfpage

1.1

1.2

1.3

PLnom

(W)

(VSWR = 1)

MGP619

VCE

VCEnom

VSWR =

PSnom

The transistor has been developed for use with

unstabilized supply voltages. As the output power and

drive power increase with the supply voltage, the nominal

output power must be derated in accordance with the

graph for safe operation at supply voltages other than the

nominal. The graph shows the permissible output power

under nominal conditions (VSWR = 1), as a function of the

expected supply over-voltage ratio with VSWR as

parameter.

The graph applies to the situation in which the drive

(PS/PSnom) increases linearly with supply over-voltage

ratio.

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