BLW85 datasheet(3/15 Pages) PHILIPS

3 / 15 page

March 1993

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW85

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (VBE = 0)

peak value

VCESM

max.

36 V

Collector-emitter voltage (open base)

VCEO

max.

16 V

Emitter-base voltage (open-collector)

VEBO

max.

4 V

Collector current (average)

IC(AV)

max.

9 A

Collector current (peak value); f

> 1 MHz

ICM

max.

22 A

R.F. power dissipation up to (f

> 1 MHz); Tmb =25 °CPrf

max.

105 W

Storage temperature

Tstg

−65 to + 150 °C

Operating junction temperature

max.

200

°C

Fig.2 D.C. SOAR.

handbook, halfpage

MGP612

110

102

VCE (V)

(A)

Th = 70 °C

Tmb = 25 °C

Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f ≥ 1 MHz.

handbook, halfpage

100

150

120

100

MGP613

Prf

(W)

Th (°C)

continuous

d.c. operation

derate by 0.43 W/K

continuous

r.f. operation

derate by

0.58 W/K

short-time

operation

during mismatch

THERMAL RESISTANCE

(dissipation = 30 W; Tmb =79 °C, i.e. Th =70 °C)

From junction to mounting base (d.c. dissipation)

Rth j-mb(dc)

2,5 K/W

From junction to mounting base (r.f. dissipation)

Rth j-mb(rf)

1,8 K/W

From mounting base to heatsink

Rth mb-h

0,3 K/W

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