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BLW85 Datasheet(PDF) 13 Page - NXP Semiconductors |
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BLW85 Datasheet(HTML) 13 Page - NXP Semiconductors |
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13 / 15 page ![]() March 1993 13 Philips Semiconductors Product specification HF/VHF power transistor BLW85 Fig.20 Power gain as a function of frequency. handbook, halfpage 30 10 MGP628 110 102 Gp (dB) 20 f (MHz) Fig.21 Input impedance (series components) as a function of frequency. handbook, halfpage 10 0 MGP629 110 102 2.5 5 7.5 5 −5 −2.5 0 2.5 ri ( Ω) xi ( Ω) f (MHz) xi ri Fig. 20 and 21 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. Conditions: VCE = 12, 5 V VCE = 13, 5 V PL = 30 W (P.E.P.) PL = 35 W (P.E.P.) Th =25 °CTh =25 °C Rth mb-h ≤ 0,3 K/W Rth mb-h ≤ 0,3 K/W IC(ZS) = 25 mA IC(ZS) = 25 mA ZL = 1,8 Ω ZL = 1,8 Ω |
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