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BLW85 Datasheet(PDF) 10 Page - NXP Semiconductors |
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BLW85 Datasheet(HTML) 10 Page - NXP Semiconductors |
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10 / 15 page ![]() March 1993 10 Philips Semiconductors Product specification HF/VHF power transistor BLW85 R.F. performance in s.s.b. class-AB operation VCE = 12,5 V; Th up to 25 °C; Rth mb-h ≤ 0,3 K/W f1 = 28,000 MHz; f2 = 28,001 Mhz Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. OUTPUT POWER W Gp dB ηdt % d3 dB(1) d5 dB(1) IC(ZS) mA 3 to 30 (P.E.P.) typ. 19,5 typ. 35 typ. −33 typ. −36 25 Fig.15 Test circuit; s.s.b. class-AB. handbook, full pagewidth MGP623 R3 R4 R5 R1 L2 C4 C3 L3 C12 C13 C14 C6 C5 L1 C2 C1 C7 L4 T.U.T. C8 C10 C11 C9 R2 L5 +VB = 12.5 V R6 TR2 bias TR1 C16 C15 RL = 50 Ω +VB = 12.5 V RS = 50 Ω |
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