March 1993

2

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW85

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

B and C operated mobile h.f. and

v.h.f. transmitters with a nominal

supply voltage of 12,5 V. The

transistor is resistance stabilized and

is guaranteed to withstand severe

load mismatch conditions with a

supply over-voltage to 16,5 V.

request.

It has a 3/8" flange envelope with a

ceramic cap. All leads are isolated

from the flange.

QUICK REFERENCE DATA

MODE OF OPERATION

V

f

MHz

W

dB

η

%

Ω

Ω

dB

c.w. (class-B)

12,5

175

45

>

4,5

> 75

1,4

+ j1,5 2,7−j1,3

−

s.s.b. (class-AB)

12,5

1,6

−28 3−30 (P.E.P.)

typ. 19,5

typ. 35

−−

typ.

−33

PIN CONFIGURATION

handbook, halfpage

e

c

b

MBB012

Fig.1 Simplified outline and symbol.

halfpage

1

23

4

MSB057

PINNING - SOT123

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.