BLW85 datasheet(12/15 Pages) PHILIPS

12 / 15 page

March 1993

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW85

Fig.16

handbook, halfpage

020

−20

d3, d5

(dB)

−60

−40

MGP624

P.E.P. (W)

intermodulation distortion versus

output power *

VCE = 12,5 V; f1 = 28,000 Mhz; f2 = 28,001 MHz; Th =25 °C;

Rth mb-h ≤ 0,3 °K/W; IC(ZS) = 25 mA; typical values.

Fig.17

handbook, halfpage

020

ηdt

(%)

MGP625

P.E.P. (W)

typ

double-tone efficiency versus

output power

VCE = 12,5 V; f1 = 28,000 Mhz; f2 = 28,001 MHz; Th =25 °C;

Rth mb-h ≤ 0,3 °K/W; IC(ZS) = 25 mA; typical values.

Fig.18

handbook, halfpage

020

−20

d3, d5

(dB)

−60

−40

MGP626

P.E.P. (W)

intermodulation distortion versus

output power *

VCE = 13,5 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 °C;

Rth mb-h ≤ 0,3 K/W ; IC(ZS) = 25 mA; typical values.

Stated intermodulation distortion figures are referred to

the according level of either of the equal amplified tones.

Relative to the according peak envelope powers these figures

should be increased by 6 dB.

Fig.19

handbook, halfpage

020

ηdt

(%)

MGP627

P.E.P. (W)

typ

double-tone efficiency versus

output power

VCE = 13,5 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 °C;

Rth mb-h ≤ 0,3 K/W ; IC(ZS) = 25 mA; typical values.

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