BLW85 datasheet(4/15 Pages) PHILIPS

4 / 15 page

March 1993

Philips Semiconductors

Product speciﬁcation

HF/VHF power transistor

BLW85

CHARACTERISTICS

Tj =25 °C

Note

1. Measured under pulse conditions: tp ≤ 200 µs; δ≤ 0,02.

Collector-emitter breakdown voltage

VBE = 0; IC = 50 mA

V(BR) CES

36 V

Collector-emitter breakdown voltage

open base; IC = 100 mA

V(BR) CEO

16 V

Emitter-base breakdown voltage

open collector; IE = 25 mA

V(BR)EBO

Collector cut-off current

VBE = 0; VCE = 18 V

ICES

25 mA

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

ESBO

8mJ

RBE =10 Ω

ESBR

8mJ

D.C. current gain(1)

typ.

IC = 4 A; VCE =5 V

hFE

10 to 80

D.C. current gain ratio of matched devices(1)

IC = 4 A; VCE =5 V

hFE1/hFE2

1,2

Collector-emitter saturation voltage(1)

IC = 12,5 A; IB = 2,5 A

VCEsat

typ.

1,5 V

Transition frequency at f = 100 MHz(1)

−IE =

4 A; VCB = 12,5 V

typ.

650 MHz

−I

E = 12,5 A; VCB = 12,5 V

typ.

600 MHz

Collector capacitance at f = 1 MHz

IE =Ie =0;VCB = 15 V

typ.

120 pF

Feedback capacitance at f = 1 MHz

IC = 200 mA; VCE = 15 V

Cre

typ.

82 pF

Collector-ﬂange capacitance

Ccf

typ.

2 pF

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