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UPD17P218 Datasheet(PDF) 14 Page - Renesas Technology Corp |
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UPD17P218 Datasheet(HTML) 14 Page - Renesas Technology Corp |
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14 / 32 page ![]() µPD17P218 12 3. WRITING/VERIFYING ONE-TIME PROM (PROGRAM MEMORY) The program memory of the µPD17P218 is a one-time PROM of 8192 x 16 bits. To write data to or verify this one- time PROM, the pins shown in the following table are used. No address input pin is used, as the address is updated by the clock input from the CLK pin. Table 3-1 Pins Used to Write/Verify Program Memory Pin Name VPP VDD CLK MD0-MD3 D0-D7 Function Applies voltage when program memory is written/verified. Apply +12.5 V to this pin. Positive power supply. Apply +6 V to write/verify program memory. Input clock to update address when program memory is written/verified. Program memory address is updated when four pulses are input to this pin. Select operation mode when program memory is written/verified. Input/output 8-bit data when program memory is written/verified. 3.1 OPERATION MODE FOR WRITING/VERIFICATION OF PROGRAM MEMORY If +6 V is applied to the VDD and +12.5 V to the VPP pin after µPD17P218 has been placed in the reset status for a fixed time (VDD = 5V, RESET = 0V), µPD17P218 enters program memory write/verify mode. The MD0 to MD3 pins are used to set the operating modes listed in the following table. Leave the pins not used for program memory writing/verification open or connect to GND through pull-down resistors (470 Ω) (Refer to PIN CONFIGRATION (2) PROM programming mode). Table 3-2 Operating Mode Specification Operating Mode Specification Remarks: ×: don‘t care (L or H) MD0 MD1 MD2 MD3 HL H L LH H H LL H H H × HH VDD +6 V VPP +12.5 V Operating Mode Program memory address 0 clear mode Write mode Verify mode Program inhibit mode |
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