Analog Integrated Circuit Device Data

Freescale Semiconductor

7

33186

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

High Side Overcurrent Detection(4)

Low Side Overcurrent Detection

11

8.0

–

–

–

–

A

Leakage Current

Output Stage Switched off

–

–

100

µA

Free-Wheeling Diode Forward Voltage

IOU = 3.0 A

––

2.0

V

Free-Wheeling Diode Reverse

Recovery Time

IFM =1.0 A, di/dt = 4.0 A/µs

–2.0

5.0

µs

Switch-off Temperature

Hysteresis

160

20

–

–

190

30

°C

°C

OUTPUT STATUS FLAG (OPEN DRAIN OUTPUT)

Output High (SF not set)

USF = 5.0 V

–

–10

µA

Output Low (SF set)

ISF = 300 µA

VSF

–

–

1.0

V

TIMING

PWM frequency

CCP = 33 nF

f–

–

10

KHz

Maximum Switching Frequency During

Current Limitation

f–

–

20

KHz

Output ON Delay

––

15

µs

Output OFF Delay

––

15

µs

Output Switching Time

CCP = 0 to 33 nF

OUTiH.....OUTiL, OUTiL.....OUTiH,

IOUT = 3.0 A

2.0

–

5.0

µs

Disable Delay Time

DIi.....OUTi

––

8.0

µs

Turn off in Case of Overcurrent or

Overtemperature

–4.0

8.0

µs

Power On Delay Time (CCP = 33 nF)(5)

–1.0

5.0

ms

Notes

4.

In case of overcurrent, the time when the current is greater than 7.8 A is lower than 30

µs, with a maximum frequency of 1 kHz.

5.

This parameter corresponds to the time for CCP to reach its nominal value when VBAT is applied.

Table 3. STATIC ELECTRICAL CHARACTERISTICS(continued)

Characteristic noted under conditions -40

°C to +125 °C, VBAT from 5 V to 28 V, unless otherwise note. Typical values reflect

approximate mean at 25

°C, nominal VCC, at time of device characterization.

Characteristics

Symbol

Min

Typ

Max

Unit