56F8322 datasheet(110/136 Pages) FREESCALE

110 / 136 page

56F8322 Techncial Data, Rev. 16

110

Freescale Semiconductor

Preliminary

Figure 10-2 shows the definitions of the following signal states:

•

Active state, when a bus or signal is driven, and enters a low impedance state

•

Tri-stated, when a bus or signal is placed in a high impedance state

•

Data Valid state, when a signal level has reached VOL or VOH

•

Data Invalid state, when a signal level is in transition between VOL and VOH

Figure 10-2 Signal States

10.4 Flash Memory Characteristics

Table 10-12 Flash Timing Parameters

Characteristic

Symbol

Min

Typ

Max

Unit

Program time1

1. There is additional overhead which is part of the programming sequence. See the 56F8300 Peripheral User Manual for details.

Program time is per 16-bit word in Flash memory. Two words at a time can be programmed within the Program Flash module,

as it contains two interleaved memories.

Tprog

—

μs

Erase time2

2. Specifies page erase time. There are 512 bytes per page in the Data and Boot Flash memories. The Program Flash module

uses two interleaved Flash memories, increasing the effective page size to 1024 bytes.

Terase

—

Mass erase time

Tme

100

—

Data Invalid State

Data1

Data2 Valid

Data

Tri-stated

Data3 Valid

Data2

Data3

Data1 Valid

Data Active

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