IPS8200HQ datasheet(7/36 Pages) STMICROELECTRONICS

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Electrical characteristics

4.1

Power section

10.5 V < VCC < 36 V; -40 °C < TJ < 125 °C; unless otherwise specified.

Table 4. Power section

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCC

Supply voltage

10.5

VCC CLAMP

Clamp on VCC

Current 20 mA

RDS(on)

On-state resistance

IOUT = 0.5 A at TJ = 25 °C

0.11

IOUT = 0.5 A at TJ = 125 °C

0.2

VCC supply current

All channels in OFF-state, DC/DC =

OFF, VREG=5 V, SPI inactive (1)

0.65

1.1

All channels in ON-state, DC/DC = ON,

VREG = 5 V, SPI active (2)

5.3

All channels in ON-state, DC/DC =

OFF, VREG = 5 V, SPI active (3)

3.5

5.2

IDS

VREG supply current

DC/DC = OFF, VREG = 5 V, SPI

inactive, WD_EN = 0

200

µA

DC/DC = OFF, VREG = 5 V, SPI active,

WD_EN = VREG

250

µA

ILGND

Output current at GND

disconnection

All pins at 0 V except VOUT = 24 V

0.5

VOUT(OFF)

OFF-state output voltage

VIN = 0 V, IOUT = 0 A

IOUT(OFF)

OFF-state output current

VIN = VOUT = 0 V

µA

fCP

Charge pump frequency

Channel in ON-state (4)

1.45

MHz

1. SS signal high, no communication.

2. SS signal low, communication ON.

3. SS signal low, communication ON.

4. To cover EN55022 class A and class B normative.

4.2

SPI characteristics

10.5 V < VCC < 36 V; 2.7 V < VREG < 5 V; -40 <Tj <125 °C; unless otherwise specified.

Table 5. SPI characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

fCLK

SPI clock frequency

MHz

tr(CLK),

tf(CLK)

SPI clock rise/fall time

tsu(SS)

SS setup time

120

th(SS)

SS hold time

120

tw(CLK)

CLK high time

IPS8200HQ, IPS8200HQ-1

Electrical characteristics

DS14313 - Rev 2

page 7/36

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