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35FS6500 Datasheet(PDF) 16 Page - NXP Semiconductors |
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35FS6500 Datasheet(HTML) 16 Page - NXP Semiconductors |
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16 / 139 page  NXP Semiconductors 35FS4500-35FS6500-ASILB Grade 0 safety power system basis chip with CAN FD transceiver TA = –40 °C to 150 °C, unless otherwise specified. VSUP = VSUP_UV_L to 36 V, unless otherwise specified. All voltages referenced to ground. When 28 V < VSUP < 36 V, thermal dissipation must be considered (see Figure 27). Symbol Parameter Min. Typ. Max. Unit Notes HYST VCORE_FB_OV VCORE FB overvoltage detection threshold 0.84 — 0.905 V VCORE_FB_OV_ HYST VCORE FB overvoltage hysteresis 10 — 30 mV [5] VCORE_FB_DRIFT VCORE_FB drift versus FCRBM 50 100 150 mV VCCA_UV_5 VCCA undervoltage detection threshold (5.0 V configuration) 4.5 — 4.75 V VCCA_UV_5D VCCA undervoltage detection threshold (degraded 5.0 V) 3.0 — 3.2 V VCCA_UV_33 VCCA undervoltage detection threshold (3.3 V configuration) 3.0 — 3.2 V VCCA_OV_5 VCCA overvoltage detection threshold (5.0 V configuration) 5.25 — 5.5 V VCCA_OV_33 VCCA overvoltage detection threshold (3.3 V configuration) 3.4 — 3.6 V VCCA_5_HYST VCCA undervoltage and overvoltage hysteresis (5.0 V configuration) — 0.105 — V [5] VCCA_33_HYST VCCA undervoltage and overvoltage hysteresis (3.3 V configuration) — 0.07 — V [5] VAUX_UV_5 VAUX undervoltage detection threshold (5.0 V configuration) 4.5 — 4.75 V VAUX_UV_5D VAUX undervoltage detection threshold (degraded 5.0 V) 3.0 — 3.2 V VAUX_UV_33 VAUX undervoltage detection threshold (3.3 V configuration) 3.0 — 3.2 V VAUX_OV_5 VAUX overvoltage detection threshold (5.0 V configuration) 5.25 — 5.5 V VAUX_OV_33 VAUX overvoltage detection threshold (3.3 V configuration) 3.4 — 3.6 V VAUX_5_HYST VAUX undervoltage and overvoltage hysteresis (5.0 V configuration) — 0.105 — V [5] VAUX_33_HYST VAUX undervoltage and overvoltage hysteresis (3.3 V configuration) — 0.07 — V [5] Fail-safe outputs VRSTB_OL Reset low output level (I_RSTB = 2.0 mA) — — 0.5 V IRSTB_LIM Reset output current limitation 11 — 25 mA VRSTB_IL Reset low level detection threshold (falling) 1.0 — — V VRSTB_IH Reset high level detection threshold (rising) — — 2.0 V VRSTB_HYST Reset hysteresis 200 — — mV RSTBPULL-DOWN RSTB pull-down resistor — 1.0 — MΩ VFS0B_OL FS0B low output level (I_FS0B = 2.0 mA) — — 0.5 V IFS0B_LIM FS0B output current limitation 4.0 — 16 mA VFS0B_IL FS0B low level detection threshold (falling) 1.0 — — V VFS0B_IH FS0B high level detection threshold (rising) — — 2.0 V VFS0B_HYST FS0B hysteresis 100 — — mV FS0BPULL-DOWN FS0B pull-down resistor — 4.0 — MΩ VFS1B_OL FS1B low output level (I_FS1B = 2.0 mA) — — 0.5 V IFS1B_LIM FS1B output current limitation 4.0 — 16 mA VFS1B_IL FS1B low level detection threshold (falling) 1.0 — — V VFS1B_IH FS1B high level detection threshold (rising) — — 2.0 V Table 5. Static electrical characteristics ...continued 35FS4500-35FS6500-ASILB All information provided in this document is subject to legal disclaimers. © 2024 NXP B.V. All rights reserved. Product data sheet Rev. 3 — 5 August 2024 Document feedback 16 / 139 |
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