DDC232

SBAS331D – AUGUST 2004 – REVISED APRIL 2010

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

DEVICE FAMILY COMPARISON

MAXIMUM DATA

PACKAGE-

PRODUCT

# OF CHANNELS

FULL-SCALE

RATE

POWER/CHANNEL

LEAD

DDC112

2

1000pC(1)

20kSPS

40mW

SO-28

DDC112K

2

1000pC(1)

3.3kSPS

40mW

TQFP-32

DDC114

4

350pC

3.3kSPS

13mW

QFN-48

DDC118

8

350pC

3.3kSPS

13mW

QFN-48

DDC316

16

12pC

100kSPS

28mW

BGA-64

DDC232C

32

350pC

3.1kSPS

7mW

BGA-64

DDC232CK

32

350pC

6.2kSPS

10mW

BGA-64

(1)

Using external integration capacitors.

PACKAGE/ORDERING INFORMATION

For the most current package and ordering information see the Package Option Addendum at the end of this

document, or visit the device product folder on www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

AVDD to AGND

–0.3V to +6V

DVDD to DGND

–0.3V to +3.6V

AGND to DGND

±0.2V

VREF Input to AGND

2.0V to AVDD + 0.3V

Analog Input to AGND

–0.3V to +0.7V

Digital Input Voltage to DGND

–0.3V to DVDD + 0.3V

Digital Output Voltage to DGND

–0.3V to AVDD + 0.3V

Operating Temperature

0°C to +70°C

Storage Temperature

–60°C to +150°C

Junction Temperature (TJ)

+150°C

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

2

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