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TLE5010 Datasheet(PDF) 11 Page - Infineon Technologies AG |
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TLE5010 Datasheet(HTML) 11 Page - Infineon Technologies AG |
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11 / 56 page ![]() TLE5010 General Draft Preliminary Data Sheet 11 V 0.9, 2007-05 2.4 GMR Functionality The GMR sensor is implemented in vertical integration. This means, that the GMR active areas are integrated above the logic part. GMR elements change their resistance depending on the direction of the magnetic field. 4 individual GMR elements are connected to one Wheatstone sensor bridge. They sense either the • X component, VX (cosine) or the • Y component, VY (sine) of the applied magnetic field. The advantage of a full-bridge structure is that the GMR signal amplitude is doubled. Figure 3 Sensitive bridges of the GMR Sensor1) 1) The arrows in the resistor symbols show the direction of the reference layer V DDG GND ADC X+ GMR Resistors ADC X -ADCY+ADCY - V X V Y 90° 0° N S |
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