5

LP3470A

www.ti.com

SNVSBF5C – JULY 2019 – REVISED MAY 2020

Product Folder Links: LP3470A

Submit Documentation Feedback

Copyright © 2019–2020, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

As a result of the low dissipated power in this device, it is assumed that TJ = TA.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range, unless otherwise noted

(1)

MIN

MAX

UNIT

Voltage

VCC

–0.3

12

V

RESET

–0.3

12

SRT

–0.3

5.5

Current

RESET

±70

mA

Temperature(2)

Operating junction temperature, TJ

–40

150

°C

Storage, Tstg

–65

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-

001(1)

± 2000

V

Charged device model (CDM), per JEDEC specification

JESD22-C101(2)

± 750

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC

Input supply voltage

0.95

10

V

VRESET, VRESET

RESET pin voltage

0

10

V

IRESET, IRESET

RESET pin current

0

±5

mA

TJ

Junction temperature (free air temperature)

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC(1)

LP3470A

UNIT

DBV (SOT23-5)

5 PINS

RθJA

Junction-to-ambient thermal resistance

187.5

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

109.2

°C/W

RθJB

Junction-to-board thermal resistance

92.8

°C/W

ψJT

Junction-to-top characterization parameter

35.4

°C/W

ψJB

Junction-to-board characterization parameter

92.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W