VN7140AS12 datasheet(9/39 Pages) STMICROELECTRONICS

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VN7140AS12

Electrical specification

DocID029756 Rev 2

9/39

Table 6: Power section

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCC

Operating supply voltage

VUSD

Undervoltage shutdown

2.85

VUSDReset

Undervoltage shutdown

reset

VUSDhyst

Undervoltage shutdown

hysteresis

0.3

RON

On-state resistance

IOUT = 1 A; Tj = 25 °C

140

mΩ

IOUT = 1 A; Tj = 150 °C

280

IOUT = 1 A; VCC = 4 V; Tj = 25

°C

210

Vclamp

Clamp voltage

IS = 20 mA; 25°C < Tj < 150 °C

IS = 20 mA; Tj = -40 °C

ISTBY

Supply current in standby

at VCC = 13 V (1)

VCC = 13 V;

VIN = VOUT = VSEn = 0 V;

Tj = 25 °C

0.5

µA

VCC = 13 V;

VIN = VOUT = VSEn = 0 V;

Tj = 85 °C (2)

0.5

VCC = 13 V;

VIN = VOUT = VSEn = 0 V;

Tj = 125°C

tD_STBY

Standby mode blanking

time

VCC = 13 V; VIN = VOUT = 0 V;

VSEn = 5 V to 0 V

300

550

µs

IS(ON)

Supply current

VCC = 13 V; VSEn = 0 V;

VIN = 5 V; IOUT = 0 A

IGND(ON)

Control stage current

consumption in ON-state.

All channels active.

VCC = 13 V; VSEn = 5 V;

VIN = 5 V; IOUT = 1 A

IL(off)

Off-state output current at

VCC = 13 V

VIN = VOUT = 0 V; VCC = 13 V;

Tj = 25 °C

0.01

0.5

µA

VIN = VOUT = 0 V; VCC = 13 V;

Tj = 125 °C

Output - VCC diode voltage

IOUT = -1 A; Tj = 150 °C

0.7

Notes:

(1)PowerMOS leakage included.

(2)Parameter specified by design; not subject to production test.

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