VN7140ASTR datasheet(6/45 Pages) STMICROELECTRONICS

6 / 45 page

Symbol Parameter

Value

Unit

EMAX

Maximum switching energy (single pulse) (TDEMAG = 0.4 ms; Tjstart = 150 °C)

VESD

Electrostatic discharge (JEDEC 22A-114F)

INPUT

4000

MultiSense

2000

SEn, SEL0,1, FaultRST

4000

OUTPUT

VCC

VESD

Charge device model (CDM-AEC-Q100-011)

750

Junction operating temperature

-40 to 150

°C

Tstg

Storage temperature

-55 to 150

2.2

Thermal data

Table 4. Thermal data

Symbol

Parameter

Typ. value

Unit

SO-8

PowerSSO-16

Rthj-board

Thermal resistance junction-board

(JEDEC JESD 51-8) (1)

7.9

°C/W

Rthj-amb

Thermal resistance junction-ambient

(JEDEC JESD 51-2)(2)

Rthj-amb

Thermal resistance junction-ambient

(JEDEC JESD 51-2)

48.5

26.5

1. Device mounted on four-layers 2s2p PCB

2. Device mounted on two-layers 2s0p PCB with 2 cm2 heatsink copper trace

2.3

Main electrical characteristics

7 V < VCC < 28 V; -40°C < Tj < 150°C, unless otherwise specified.

All typical values refer to VCC = 13 V; Tj = 25°C, unless otherwise specified.

Table 5. Power section

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VCC

Operating supply voltage

VUSD

Undervoltage shutdown

VUSDReset

Undervoltage shutdown reset

VUSDhyst

Undervoltage shutdown

hysteresis

0.3

RON

On-state resistance

IOUT = 1 A; Tj = 25°C

140

mΩ

IOUT = 1 A; Tj = 150°C

280

IOUT = 1 A; VCC = 4 V; Tj = 25°C

210

Vclamp

Clamp voltage

IS = 20 mA; 25°C < Tj < 150°C

IS = 20 mA; Tj = -40°C

VN7140AJ, VN7140AS

Thermal data

DS10830 - Rev 4

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