5

ISO224

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SBAS738A – JUNE 2018 – REVISED OCTOBER 2018

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(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC (1)

ISO224x

UNIT

DWV (SOIC)

8 PINS

RθJA

Junction-to-ambient thermal resistance

96.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

36.9

°C/W

RθJB

Junction-to-board thermal resistance

60.1

°C/W

ψJT

Junction-to-top characterization parameter

16.9

°C/W

ψJB

Junction-to-board characterization parameter

58.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

°C/W

(1)

See the Electrical Characteristics table for maximum supply current specifications.

7.5 Power Ratings

(1)

PARAMETER

TEST CONDITIONS

VALUE

UNIT

PD

Maximum power dissipation (both sides)

VDD1 = 18 V, VDD2 = 5.5 V

194.9

mW

VDD1 = VDD2 = 5.5 V

97.4

PD1

Maximum power dissipation (high-side supply)

VDD1 = 18 V

140.4

mW

VDD1 = 5.5 V

42.9

PD2

Maximum power dissipation (low-side supply)

VDD2 = 5.5 V

54.5

mW