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LP8556 Datasheet(PDF) 7 Page - Texas Instruments |
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LP8556 Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 67 page ![]() 7 LP8556 www.ti.com SNVS871M – JULY 2012 – REVISED JUNE 2020 Product Folder Links: LP8556 Submit Documentation Feedback Copyright © 2012–2020, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953). 7.4 Thermal Information THERMAL METRIC(1) LP8556 UNIT YFQ (DSBGA) RTW (WQFN) 20 PINS 24 PINS RθJA Junction-to-ambient thermal resistance 66.2 35.0 °C/W RθJC(top) Junction-to-case (top) thermal resistance 0.5 32.2 °C/W RθJB Junction-to-board thermal resistance 15.1 13.7 °C/W ψJT Junction-to-top characterization parameter 1.9 0.3 °C/W ψJB Junction-to-board characterization parameter 15.0 13.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance n/a 3.3 °C/W (1) All voltages are with respect to the potential at the GND pins. (2) Minimum (MIN) and Maximum (MAX) limits are verified by design, test, or statistical analysis. Typical numbers are for information only. (3) Verified by design and not tested in production. 7.5 Electrical Characteristics Unless otherwise specified: VDD = 12 V, EN / VDDIO = 1.8 V, TA = 25°C (1) (2) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VDDIO Supply voltage for digital I/Os 1.62 3.6 V VDD Input voltage for the internal LDO 2.7 20 V IDD Standby supply current EN / VDDIO = 0 V, LDO disabled, –30°C ≤ TA ≤ 85°C 1.6 μA Normal mode supply current LDO enabled, boost disabled 0.9 1.5 mA LDO enabled, boost enabled, no load 2.2 3.65 fOSC Internal oscillator frequency accuracy –4% 4% –30°C ≤ TA ≤ 85°C –7% 7% VLDO LDO output voltage VDD ≥ 3.1 V 2.95 3.05 3.15 V 2.7 V ≤ VDD < 3.1 V VDD – 0.05 TTSD Thermal shutdown threshold See(3) 150 °C TTSD_hyst Thermal shutdown hysteresis 20 °C |
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