9.6 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

9.7 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

10 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision * (August 2025) to Revision A (December 2025)

Page

• Updated data sheet status from Advanced Information to Production Data ......................................................1

• Changed common mode input impedance from 7pF to 4.4pF........................................................................... 6

• Changed differential input voltage limits from ±20V to ±16V..............................................................................6

• Modified CMRR for G = 2, 10, and 20 from 81dB, 96dB, and 102dB to 80dB, 95dB, and 100dB respectively. 6

• Added the Voltage Noise section........................................................................................................................6

• Modified Nonlinearity test conditions for G=0.5 from VOUT=10V to 8V.............................................................6

• Added the differential gain nonlinearity parameter values..................................................................................6

• Changed the BW parameter value for G=10,20 from 4.2MHz to 5MHz............................................................. 6

• Modified slew rate test conditions for G=0.5 from VOUT=10V to 8V................................................................. 6

• Added Slew Rate, and Gain Switching Time parameter values, and Settling Time parameter..........................6

• Added the THD and HD2, and HD3 parameters................................................................................................ 6

• Changed IQ_input parameter typical value from 3mA to 3.2mA, and maximum value from 3.7mA to 3.9mA... 6

• Changed IQ_input over temperature parameter maximum value from 4.5mA to 4.9mA................................... 6

• Added all Typical Characteristics figures apart from Gain Error, Offset and Offset Drift Distribution, and Gain

vs. Frequency, which existed in the previous version........................................................................................ 9

• Modified the gain settings block diagram to have current sources at the input instead of resistors.................20

• Updated Input common mode vs. output differential voltage curves for G=0.5, G=1, and G=2.......................23

• Added current consumption with differential inputs section..............................................................................24

• Changed the opamp used in SAR ADC circuit from OPA192 to OPA387, also reflected in the application

circuit figure...................................................................................................................................................... 25

• Changed input filter and kickback filter for SAR ADC circuit, reflected in the application circuit figure............26

• Added the results table of the SAR ADC application circuit............................................................................. 26

• Updated the caution statement to refer to typical characteristics section.........................................................27

DATE

REVISION

NOTES

August 2025

*

Initial Release

11 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

www.ti.com

PGA848

SBOSAN4A – AUGUST 2025 – REVISED DECEMBER 2025

Copyright © 2025 Texas Instruments Incorporated

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