6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VS

Supply voltage, (VS+) – (VS–)

13.5

V

VIN,Diff

Differential input voltage

±5

V

VCM

Common-mode input voltage

VS– – 0.5

VS– + 10

V

VO

Output voltage

VS– – 0.5

VS+ + 0.5

V

II

Continuous input current

±10

mA

IO

Continuous output current(2)

25

mA

Continuous current in feedback pin(2)

13

mA

TJ

Junction temperature

125

°C

TA

Operating free-air temperature

–40

85

°C

Tstg

Storage temperature

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings can cause permanent device damage. Absolute maximum ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If

briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device cannot sustain

damage, but cannot be fully functional. Operating the device in this manner affects device reliability, functionality, performance, and

shorten the device lifetime.

(2)

Long-term continuous current for electro-migration limits.

6.2 ESD Ratings

VALUE

UNIT

V(ESD) Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±2500

V

Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002, all pins(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VS

Single-supply voltage

6

10

13

V

TA

Ambient temperature

–40

25

85

°C

6.4 Thermal Information

THERMAL METRIC(1)

OPA818

UNIT

DBV (SOT-23)

DRG (SON)

5 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

172

54.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

71.1

56.0

°C/W

RθJB

Junction-to-board thermal resistance

42.0

27.2

°C/W

ΨJT

Junction-to-top characterization parameter

11.5

1.8

°C/W

ΨJB

Junction-to-board characterization parameter

41.6

27.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

11.1

°C/W

(1)

For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

OPA818

SBOS940B – MAY 2019 – REVISED DECEMBER 2025

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