SH7018 datasheet(388/431 Pages) RENESAS

388 / 431 page

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tOSC1

tbmv

tdwn

VCC

RES

FWE

Memory read

mode

Command

wait state

Automatic write mode

Automatic erase mode

Command wait state

Normal/abnormal

complete verify

Note : For the level of FWE input pin, set VIL when using other than the automatic write mode

and automatic erase mode.

Figure 16.26 Oscillation Stabilization Time, Boot Program Transfer Time,

and Power-Down Sequence

16.11.9

Notes On Memory Programming

1. When programming addresses which have previously been programmed, carry out auto-

erasing before auto-programming.

2. When performing programming using PROM mode on a chip that has been

programmed/erased in an on-board programming mode, auto-erasing is recommended before

carrying out auto-programming.

Notes: 1. The flash memory is initially in the erased state when the device is shipped by Hitachi.

For other chips for which the erasure history is unknown, it is recommended that auto-

erasing be executed to check and supplement the initialization (erase) level.

2. Auto-programming should be performed once only on the same address block.

Additional programming cannot be performed on previously programmed address

blocks.

SH7018 Datasheet(PDF) 388 Page - Renesas Technology Corp