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SH7713 Datasheet(PDF) 856 Page - Renesas Technology Corp |
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SH7713 Datasheet(HTML) 856 Page - Renesas Technology Corp |
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856 / 904 page ![]() Section 24 Electrical Characteristics Rev.1.50 Aug. 30, 2006 Page 816 of 860 REJ09B0288-0150 Tc2 Tc3 Tc4 Tr Tpw Tp Tc1 t CSD1 t CSD1 t AD1 t AD1 t AD1 t AD1 t AD1 t AD1 t AD1 t AD1 t AD1 t AD1 t RWD1 t RWD1 t RWD1 t RWD1 t RASD1 t RASD1 t RASD1 t RASD1 CKIO A25 to A0 CSn RD/ WR A12/A11*1 D31 to D0 RAS Write command Row address (1-4) Column address t CASD1 t CASD1 CAS t BSD t BSD (High) BS CKE t DQMD1 t DQMD1 DQMxx t DACD t DACD DACKn*2 t WDH2 t WDD2 t WDH2 t WDD2 t RASD1 Notes: 1. Address pin to be connected to A10 of SDRAM. 2. DACKn is a waveform when active-low is specified. Figure 24.35 Synchronous DRAM Burst Write Bus Cycle (Single Write × 4) (Bank Active Mode, PRE + ACTV + WRITE Commands, Different Row Address, TRCD = 1 Cycle, TRWL = 1 Cycle) |
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