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TPS51113 Datasheet(PDF) 4 Page - Texas Instruments |
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TPS51113 Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 26 page ![]() ELECTRICAL CHARACTERISTICS TPS51113, TPS51163 SLUS864 – MAY 2009........................................................................................................................................................................................................ www.ti.com These specifications apply for -40°C ≤ TA ≤ to 85°C, VVDD = 12 Vdc. (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT SUPPLY VVDD 4.5 13.2 V IVDD Supply current Switching enabled(1) 30 mA Shutdown current Switching inhibited 6 mA VDD UVLO UVLO VDD UVLO VDD raising 4.0 4.3 4.6 V UVLOHYS UVLO threshold hysteresis 250 mV REFERENCE VREF Reference voltage 0°C ≤ TA ≤ 85°C 794 800 806 mV Reference voltage –40°C ≤ TA ≤ 85°C 792 800 808 mV OSCILLATOR TPS51113 270 300 330 Measured on the SW pin, fSW Switching frequency kHz TA = 25°C TPS51163 540 600 660 VRAMP PWM ramp amplitude(1) 1.5 V PWM TPS51113 72% DMAX Maximum duty cycle TPS51163 69% TONMIN Minimum controlled pulse(1) 100 ns TNO Output driver dead time 30 ns SOFT START TSSD Soft-start delay time 4.0 5.5 7.0 ms TSS Soft-start time 2.0 3.5 5.0 ms ERROR AMPLIFIER GBWP Gain bandwidth product(1) CCOMP < 20 pF 16 MHz Aol DC gain(1) 89 dB IIB Input bias current –100 nA EASR Error amplifier output slew rate(1) CCOMP < 20 pF 6 V/ µs VCOMPDIS COMP_EN pin disabling voltage 0.8 V SHORT CIRCUIT PROTECTION IILIM Overcurrent threshold set current 9.3 10.0 10.7 µA GATE DRIVERS IHDHI High-side driver pull-up current(1) BOOT to HDRV voltage is 5 V 1.5 A RHDLO High-side driver pull-down resistance VVDD = 12 V; IDRV = –100 mA 1.4 Ω ILDHI Low-side driver pull-up current(1) VDD to LDRV voltage is 5 V 1.5 A RLDLO Low-side driver pull-down resistance VVDD = 12 V 0.8 Ω (1) Ensured by design. Not production tested. 4 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS51113 TPS51163 |
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