SE97TP datasheet(39/53 Pages) NXP

39 / 53 page

SE97_6

Product data sheet

Rev. 06 — 17 August 2009

39 of 53

NXP Semiconductors

SE97

DDR memory module temp sensor with integrated SPD, 3.3 V

I2C-bus and EEPROM inactive.

I2C-bus, temp sensor and EEPROM inactive.

Fig 25. Average supply current

Fig 26. Shutdown supply current

Temp sensor and EEPROM active.

VDD = 3.0 V to 3.6 V.

Fig 27. Average supply current during EEPROM write

Fig 28. Typical temperature accuracy

VOL1 = 0.4 V.

Fig 29. EVENT output current SE97PW, SE97TK

Fig 30. EVENT output current SE97TL, SE97TP

200

300

100

400

500

IDD(AV)

(

µA)

Tamb (°C)

−40

120

040

002aac910

VDD = 3.6 V

3.0 V

Isd(VDD)

(

µA)

−1

Tamb (°C)

−40

120

040

002aac911

VDD = 3.6 V

3.0 V

200

500

400

300

600

IDD(AV)

(

µA)

002aac912

Tamb (°C)

−40

120

040

VDD = 3.6 V

3.0 V

−2.0

3.5

−3.5

Tamb (°C)

−50

125

002aad769

100

−25

2.0

Tlim(acc)

(

°C)

−1.0

1.0

2.0

8.0

IOL

(mA)

Tamb (°C)

−50

125

002aad258

100

−25

6.0

4.0

VDD = 3.0 V to 3.6 V

VDD = 1.7 V

Tamb (°C)

−50

125

002aad767

100

−25

VDD = 3.7 V

3.3 V

2.9 V

1.7 V

IOL(sink)EVENT

(mA)

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