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LPC1313 Datasheet(PDF) 27 Page - NXP Semiconductors

Part # LPC1313
Description  32-bit ARM Cortex-M3 microcontroller; up to 32 kB flash and 8 kB SRAM; USB device
PDF  53 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

LPC1313 Datasheet(HTML) 27 Page - NXP Semiconductors

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LPC1311_13_42_43_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 11 December 2009
27 of 53
NXP Semiconductors
LPC1311/13/42/43
32-bit ARM Cortex-M3 microcontroller
8.
Limiting values
[1]
The following applies to the limiting values:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to VSS unless
otherwise noted.
[2]
Tie together VDD(3V3) and VDD(IO) externally. If separate supplies are used for VDD(3V3) and VDD(IO), ensure that the voltage difference
between both supplies is smaller than or equal to 0.5 V.
[3]
Including voltage on outputs in 3-state mode.
[4]
The peak current is limited to 25 times the corresponding maximum current.
[5]
Dependent on package type.
[6]
Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k
Ω series resistor.
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).[1]
Symbol
Parameter
Conditions
Min
Max
Unit
VDD(3V3)
supply voltage (3.3 V)
core and external rail
[2] 2.0
3.6
V
VDD(IO)
input/output supply voltage
[2] 2.0
3.6
V
VI
input voltage
5 V tolerant I/O pins; only valid
when the VDD(IO) supply voltage is
present
[3]
−0.5
+5.5
V
IDD
supply current
per supply pin
[4] -
100
mA
ISS
ground current
per ground pin
[4] -
100
mA
Ilatch
I/O latch-up current
−(0.5V
DD(IO)) < VI < (1.5VDD(IO));
Tj < 125 °C
-
100
mA
Tstg
storage temperature
[5]
−65
+150
°C
Tj(max)
maximum junction temperature
-
150
°C
Ptot(pack)
total power dissipation (per
package)
based on package heat transfer, not
device power consumption
-
1.5
W
VESD
electrostatic discharge voltage
human body model; all pins
[6]
−5000
+5000
V



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