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HAL856 Datasheet(PDF) 36 Page - Micronas |
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HAL856 Datasheet(HTML) 36 Page - Micronas |
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36 / 42 page ![]() HAL856 DATA SHEET 36 March 23, 2010; DSH000142_002EN Micronas Fig. 5–2: Telegram for coding a Write command Fig. 5–3: Telegram for coding a Read command Table 5–1: Telegram parameters (All voltages are referenced to GND.) Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions VDDL Supply Voltage for Low Level during Programming 15 5.5 6 V VDDH Supply Voltage for High Level during Programming 1 6.8 8.0 8.5 V tr Rise Time 1 −− 0.05 ms tf Fall Time 1 −− 0.05 ms tp0 Bit Time on VDD 1 1.7 1.75 1.8 ms tp0 is defined through the Sync Bit tpOUT Bit Time on Output Pin 3 2 3 4 ms tpOUT is defined through the Acknowledge Bit tp1 Voltage Change for Logical 1 1, 3 50 65 80 % % of tp0 or tpOUT tPROG Programming Time for EEPROM 1 95 100 105 ms VDD,PROG Supply Voltage during Programming 1 4.9 5 5.1 V trp Rise Time of Charging Pulse 1 0.2 0.5 1 ms tfp Fall Time of Charging Pulse 1 0 − 1ms tw Delay Time of Charging Pulse after Acknowledge 10.5 0.7 1 ms Sync COM CP ADR AP DAT DP VDD WRITE IDD Sync COM CP ADR AP DAT DP Acknowledge VDD READ IDD |
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