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TDA9898HL/V3 Datasheet(PDF) 82 Page - NXP Semiconductors |
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TDA9898HL/V3 Datasheet(HTML) 82 Page - NXP Semiconductors |
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82 / 103 page ![]() TDA9897_TDA9898_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 25 May 2009 82 of 103 NXP Semiconductors TDA9897; TDA9898 Multistandard hybrid IF processing Isource(o)PD(max) maximum phase detector output source current --65 µA Conversion synthesizer PLL; pin LFSYN2 VLFSYN2 voltage on pin LFSYN2 1- 3V KO VCO steepness ∆f VCO / ∆VLFSYN2 - 31 - MHz/V KD phase detector steepness ∆I LFSYN2 / ∆ϕVCO; see Table 57; fVCO selection: 22 MHz to 29.5 MHz - 32 - µA/rad 30 MHz to 37.5 MHz - 38 - µA/rad 38 MHz to 45.5 MHz - 47 - µA/rad 46 MHz to 53.5 MHz - 61 - µA/rad 57 MHz - 61 - µA/rad Io(PD) phase detector output current sink or source; fVCO selection: 22 MHz to 29.5 MHz - 200 - µA 30 MHz to 37.5 MHz - 238 - µA 38 MHz to 45.5 MHz - 294 - µA 46 MHz to 53.5 MHz - 384 - µA 57 MHz - 384 - µA ϕn(synth) synthesizer phase noise fsynth = 31 MHz; fIF =36MHz at 1 kHz [2] 89 99 - dBc/Hz at 10 kHz [2] 89 99 - dBc/Hz at 100 kHz [2] 98 102 - dBc/Hz at 1.4 MHz [2] 115 119 - dBc/Hz fsynth = 40 MHz; fIF = 44 MHz; external 4 MHz reference signal of 265 mV (RMS) and phase noise better than 120 dBc/Hz; see Figure 46 at 1 kHz [2] 89 96 - dBc/Hz at 10 kHz [2] 89 100 - dBc/Hz at 100 kHz [2] 96 100 - dBc/Hz at 1.4 MHz [2] 115 118 - dBc/Hz αsp spurious suppression multiple of ∆f = 500 kHz [2] 50 - - dBc IL leakage current synthesizer spurious performance > 50 dBc [2] --10 nA Table 56. Characteristics …continued VP =5V[1]; Tamb =25 °C; 8 MHz system; see Table 33 and Table 34; CW test input signal is used for specification; Vi(IF) = 10 mV (RMS); fIF = 36 MHz for low IF output of 5 MHz; IF input from 50 Ω via broadband transformer 1 : 1; gain controlled amplifier adjusted to typical specified output level; measurements taken in test circuit of Figure 51 with 4 MHz crystal oscillator reference; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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