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Data Sheet BTS50085-1TMA

Parameter and Conditions

Symbol

Values

Unit

at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified

min

typ

max

Infineon Technologies AG

Page 5

2008-Jan-24

Protection Functions

16)

Short circuit current limit (Tab to pins 1,2,6,7)

VON = 24 V, time until shutdown max. 300

µs

Tc =-40°C:

see page 8 and 13

Tc =25°C:

Tc =+150°C:

IL(SC)

180

Short circuit shutdown delay after input current

positive slope, VON > VON(SC) 17)

min. value valid only if input "off-signal" time exceeds 30

µs

td(SC)

350

µs

Output clamp (inductive load switch off)

at VOUT = Vbb - VON(CL) (e.g. over voltage)

IL= 40 mA

VON(CL)

Short circuit shutdown detection voltage

17)

(pin 4 to pins 1,2,6,7)

VON(SC)

Thermal overload trip temperature

Tjt

150

°C

Thermal hysteresis

∆Tjt

Reverse Battery

Reverse battery voltage

)

-Vbb

On-state resistance (Pins 1,2,6,7 to pin 4)

Tj = 25°C:

Vbb =-12V, VIN=0, IL=- 20 A, RIS =1 k

Ω Tj = 150°C:

RON(rev)

8.8

10.5

Ω

Integrated resistor in Vbb line

Tj = 25C:

Tj =150°C:

Rbb

105

120

125

135

150

Ω

16 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not

designed for continuous repetitive operation.

)

not subject to production test, specified by design.

)

The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as

it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor

is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic

drain-source diode. The temperature protection is not active during reverse current operation! To reduce the

power dissipation at the integrated R

bb resistor an input resistor is recommended as described on page 9.

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