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Data Sheet BTS50085-1TMA

Infineon Technologies AG

Page 9

2008-Jan-24

Over voltage protection of logic part

+ Vbb

VOUT

Signal GND

Logic

PROFET

Z,IS

RIS

Z,IN

V Z,VIS

Rbb = 120

Ω typ., VZ,IN = VZ,IS = 74V typ., RIS = 1kΩ

nominal. Note that when over voltage exceeds 79 V typ.

a voltage above 5V can occur between IS and GND, if

RV, VZ,VIS are not used.

Reverse battery protection

Logic

OUT

Power GND

Signal GND

Vbb

Power

Transistor

RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse

battery protection in applications with Vbb above 16V18);

recommended value:

RIN

RIS

0.1A

|Vbb| - 12V

if DS

is not used (or

RIN

0.1A

|Vbb| - 12V

if DS is used).

To minimize power dissipation at reverse battery

operation, the overall current into the IN and IS pin

should be about 120mA. The current can be provided

by using a small signal diode D in parallel to the input

switch, by using a MOSFET input switch or by proper

adjusting the current through RIS and RV.

Vbb disconnect with energized inductive

load

Provide a current path with load current capability by

using a diode, a Z-diode, or a varistor. (VZL < 70 V or

VZb < 42 V if RIN=0). For higher clamp voltages

currents at IN and IS have to be limited to 250 mA.

Version a:

PROFET

OUT

VZL

Version b:

PROFET

OUT

VZb

Note that there is no reverse battery protection when

using a diode without additional Z-diode VZL, VZb.

Version c: Sometimes a necessary voltage clamp is

given by non inductive loads RL connected to the same

switch and eliminates the need of clamping circuit:

PROFET

OUT

R L

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