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Data Sheet BTS50085-1TMA

Parameter and Conditions

Symbol

Values

Unit

at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified

min

typ

max

Infineon Technologies AG

Page 6

2008-Jan-24

Diagnostic Characteristics

Current sense ratio,

IL = 80 A,Tj =-40°C:

static on-condition,

Tj =25°C:

kILIS = IL : IIS,

Tj =150°C:

VON < 1.5 V

19),

IL = 20 A,Tj =-40°C:

VIS <VOUT - 5 v,

Tj =25°C:

VbIN > 4.0 V

Tj =150°C:

see diagram on page 12

IL = 10 A,Tj =-40°C:

Tj =25°C:

Tj =150°C:

IL = 4 A,Tj =-40°C:

Tj =25°C:

Tj =150°C:

kILIS

11 400

11 000

10 500

11 000

9 000

10 000

10 800

13 000

15 400

14 600

14 200

16 000

15 000

14 500

17 000

15 500

15 000

22 000

18 500

16 000

IIN = 0, I

IS=0 (e.g. during deenergizing of inductive loads):

Sense current saturation

IIS,lim

6.5

Current sense leakage current

IIN = 0

VIN = 0, IL

< 0:

IIS(LL)

IIS(LH)

0.5

µA

Current sense over voltage protection

Tj =-40°C:

Ibb = 15 mA

Tj = 25...+150°C:

VbIS(Z)

Current sense settling time

)

ts(IS)

500

µs

Input

Input and operating current (see diagram page 13)

IN grounded (VIN = 0)

IIN(on)

0.8

1.5

Input current for turn-off

21)

IIN(off)

µA

)

If VON is higher, the sense current is no longer proportional to the load current due to sense current

saturation, see

IIS,lim .

)

not subject to production test, specified by design

)

We recommend the resistance between IN and GND to be less than 0.5

Ω for turn-on and more than

500

Ω for turn-off. Consider that when the device is switched off (IIN =0) the voltage between IN and GND

reaches almost Vbb.

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