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Data Sheet BTS50085-1TMA

Infineon Technologies AG

Page 10

2008-Jan-24

Inverse load current operation

PROFET

OUT

Vbb

VOUT

- IL

R IS

IIS

The device is specified for inverse load current

operation (VOUT > Vbb > 0V). The current sense feature

is not available during this kind of operation (IIS = 0).

With IIN = 0 (e.g. input open) only the intrinsic drain

source diode is conducting resulting in considerably

increased power dissipation. If the device is switched

on (VIN = 0), this power dissipation is decreased to the

much lower value RON(INV) * I2 (specifications see page

4).

Note: Temperature protection during inverse load

current operation is not possible!

Inductive load switch-off energy

dissipation

PROFET

OUT

EAS

ELoad

{

Z L

RIS

Vbb

i (t)

Energy stored in load inductance:

EL = 1/2·L·I

While demagnetizing load inductance, the energy

dissipated in PROFET is

EAS= Ebb + EL - ER=

∫ VON(CL)·iL(t) dt,

with an approximate solution for RL > 0 Ω:

EAS=

IL· L

2·RL

(Vbb + |VOUT(CL)|) ln (1+

IL·RL

|VOUT(CL)|

)

Maximum allowable load inductance for

a single switch off

L = f (IL ); Tj,start = 150°C, Vbb = 40 V, RL = 0 Ω

L [µH]

I [A]

Externally adjustable current limit

If the device is conducting, the sense current can be

used to reduce the short circuit current and allow

higher lead inductance (see diagram above). The

device will be turned off, if the threshold voltage of T2

is reached by I

S*RIS . After a delay time defined by

V*CV T1 will be reset. The device is turned on again,

the short circuit current is defined by I

L(SC) and the

device is shut down after t

d(SC) with latch function.

PROFET

Power

GND

Signal

GND

Vbb

OUT

load

Signal

Vbb

100

1000

10000

100

1000

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