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Data Sheet BTS50085-1TMA

Infineon Technologies AG

Page 8

2008-Jan-24

Input circuit (ESD protection)

V bb

Rbb

Z,IN

V bIN

V IN

When the device is switched off (IIN = 0) the voltage

between IN and GND reaches almost Vbb. Use a

bipolar or MOS transistor with appropriate breakdown

voltage as driver.

VZ,IN = 74 V (typ).

Short circuit detection

Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)

(80 ...300 µs).

Short circuit

detection

Logic

unit

+ Vbb

OUT

Current sense status output

Z,IS

VZ,IS = 74 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n

devices are connected in parallel). IS = IL/kilis can be

driven only by the internal circuit as long as Vout - VIS >

5 V. If you want measure load currents up to IL(M), RIS

should be less than

Vbb - 5 V

IL(M) / Kilis

Note: For large values of RIS the voltage VIS can reach

almost Vbb. See also over voltage protection.

If you don't use the current sense output in your

application, you can leave it open.

Inductive and over voltage output clamp

+ Vbb

OUT

PROFET

OUT

VON is clamped to VON(Cl) = 62 V typ

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