TC246

SOCS096 – JULY 2010

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The TC246 sensor is built using TI-proprietary advanced Split-Gate Virtual-Phase CCD (SGVPCCD) technology,

which provides devices with wide spectral response, high quantum efficiency (QE), low dark current, and high

response uniformity.

This MOS device contains limited built-in protection. During storage or handling, the device leads should be

shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be

connected to Vss. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid

shorting OUT to Vss during operation to prevent damage to the amplifier. The device can also be damaged if the

output and ADB terminals are reverse-biased and excessive current is allowed to flow. Specific guidelines for

handling devices of this type are contained in the publication "Electrostatic Discharge (ESD)" available from

Texas Instruments.

NOTE

Attention to EMCCD users:

The charge carrier multiplication (CCM) gain shift can be observed over a period of time.

As a results, a property fluctuation will occur under certain usage environment. In order to

minimize the change in characteristics with time, it is better not to use CCM gains beyond

necessity. Also exposing a sensor to a strong light source should be avoided.

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Product Folder Link(s): TC246