TC246

www.ti.com

SOCS096 – JULY 2010

680 x 500 PIXEL IMPACTRON™ COLOR CCD IMAGE SENSOR

Check for Samples: TC246

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FEATURES

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Very Low Noise, Very High Sensitivity,

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High Photoresponse Uniformity Over a Wide

Electronically Variable Charge Domain Gain

Spectral Range

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1/2-in Format, Solid State Charge-Coupled

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Solid State Reliability With No Image Burn-in,

Device (CCD) Frame Interline Transfer Color

Residual Imaging, Image Distortion, or

Image Sensor for Low Light Level Applications

Microphonics

with 30 Frames/s or 60 Fields/s Readout Speed

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Package with Built-in Peltier Cooler and

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Color Mosaic Filters On Chip

Temperature Sensor

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340,000 Pixels per Field

DUAL-IN-LINE PACKAGE

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Frame Memory

(TOP VIEW)

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658 (H) x 496 (V) Active Pixels in Image

Sensing Area

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Multimode Readout Capability

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Progressive Scan

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Pseudo-Interlace Scan

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Line Summing

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Pixel Summing

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0-8 V Serial Operation Except CMG Gate

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Continuous Electronic Exposure Control from

1/30 s to 1/2,000 s

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Advanced Lateral Overflow Drain

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10.0-µm Square Pixels

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Low Dark Current

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RoHS-Compliant Product

DESCRIPTION

The TC246 is a frame interline transfer CCD image sensor designed for use in single-chip color NTSC TV,

computer, and special-purpose applications requiring low noise, high sensitivity, high speed, and low smear.

The TC246 is a new device of the IMPACTRON™ family of very-low noise, high sensitivity, high speed and low

smear sensors that multiply charge directly in the charge domain before conversion to voltage. The charge

carrier multiplication (CCM) is achieved by using a low-noise single-carrier, impact ionization process that occurs

during repeated carrier transfers through high field regions. Applying multiplication pulses to specially designed

gates activates the CCM. Multiplication gain is variable by adjusting the amplitude of the multiplication pulses.

The device function resembles the function of an image intensifier implemented in solid state.

The image-sensing area of the TC246 is configured into 500 lines with 680 pixels in each line. 20 pixels are

reserved in each line for dark reference. The blooming protection is based on an advanced lateral overflow drain

concept that does not reduce NIR response. The frame interline transfer from the image sensing area to the

memory area is implemented to minimize image smear. After charge is integrated and stored in the memory it is

available for readout in the next cycle. This is accomplished by using a unique serial register design that includes

special charge multiplication pixels.

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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Copyright © 2010, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.