TC246

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SOCS096 – JULY 2010

ELECTRICAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

Charge multiplication gain

1

100

1

1.4

Dynamic range without CCM gain

63

dB

75

dB

14

µV/e

16

ns

Output resistance

320

Ω

20

e

1

e

Response linearity with no CCM gain

1

Response linearity with typical CCM gain

1

Parallel transfer

0.99994

1

Serial transfer

0.99994

1

Supply current

2

mA

IAG1

3

IAG2

7

IAG1, IAG2

3

nF

SAG1

4

SAG2

5

Input capacitance

SAG1, SAG2

3

SRG1

85

SRG2

55

CMG

25

pF

ODB

2000

RST

7

(1)

Excess noise factor "F" is defined as the ratio of noise sigma after multiplication divided by M times the noise sigma before multiplication

where M is the charge multiplication gain.

(2)

Dynamic range is -20 times the logarithm of the noise sigma divided by the saturation-output signal amplitude

(3)

Charge conversion factor is defined as the ratio of output signal to input number of electrons.

(4)

Signal-response delay time is the time between the falling edge of the SRG1 pulse and the output-signal valid state.

(5)

The values in the table are quoted using correlated double sampling (CDS). CDS is a signal processing technique that improves

performance by minimizing undesirable effects of reset noise.

(6)

Charge transfer efficiency is one minus the charge loss per transfer in the CCD register. The test is performed in the dark using either

electrical or optical input.

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